DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Ji-Sang | ko |
dc.contributor.author | Ryu, Byung-Ki | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-11T18:29:04Z | - |
dc.date.available | 2013-03-11T18:29:04Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-06 | - |
dc.identifier.citation | JOURNAL OF PHYSICAL CHEMISTRY C, v.115, no.21, pp.10345 - 10350 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | http://hdl.handle.net/10203/99910 | - |
dc.description.abstract | We perform density-functional calculations to investigate the defect properties of group-V elements (P, As, Sb) in Si, Ge, and Si1-xGex, alloy nanowires. In all nanowires, P dopants have a tendency to form donor-pair defects, which consist of two dopants at the first nearest distance, when the wire diameter decreases below a critical value. The quantum confinement and chemical bonding effects play a role in stabilizing donor-pair defects against isolated substitutional donors. As the donor-pair defect has a deep level in the band gap, which is electrically inactive, the doping efficiency is reduced in small-diameter nanowires. As the Ge concentration increases, the formation of the donor-pair defect becomes more favorable, lowering further the doping efficiency. On the other hand, with As and Sb dopants, which have the larger atomic radii, the formation of donor-pair defects is suppressed due to large strain energies. Uniaxial compressive strain also reduces the stability of donor-pair defects and thereby increases the doping efficiency. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | DENSITY-FUNCTIONAL APPROXIMATIONS | - |
dc.subject | TOTAL-ENERGY CALCULATIONS | - |
dc.subject | WAVE BASIS-SET | - |
dc.subject | SILICON NANOWIRES | - |
dc.subject | GERMANIUM NANOWIRES | - |
dc.subject | DOPANT DISTRIBUTION | - |
dc.subject | CORE-SHELL | - |
dc.subject | HOLE GAS | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | SEMICONDUCTORS | - |
dc.title | Stability of Donor-Pair Defects in Si1-xGex Alloy Nanowires | - |
dc.type | Article | - |
dc.identifier.wosid | 000290914700005 | - |
dc.identifier.scopusid | 2-s2.0-79957851579 | - |
dc.type.rims | ART | - |
dc.citation.volume | 115 | - |
dc.citation.issue | 21 | - |
dc.citation.beginningpage | 10345 | - |
dc.citation.endingpage | 10350 | - |
dc.citation.publicationname | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | DENSITY-FUNCTIONAL APPROXIMATIONS | - |
dc.subject.keywordPlus | TOTAL-ENERGY CALCULATIONS | - |
dc.subject.keywordPlus | WAVE BASIS-SET | - |
dc.subject.keywordPlus | SILICON NANOWIRES | - |
dc.subject.keywordPlus | GERMANIUM NANOWIRES | - |
dc.subject.keywordPlus | DOPANT DISTRIBUTION | - |
dc.subject.keywordPlus | CORE-SHELL | - |
dc.subject.keywordPlus | HOLE GAS | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
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