Ultraviolet Photo-Annealing Process for Low Temperature Processed Sol-Gel Zinc Tin Oxide Thin Film Transistors

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dc.contributor.authorHwang, Young-Hwanko
dc.contributor.authorSeo, Seok-Junko
dc.contributor.authorJeon, Jun-Hyuckko
dc.contributor.authorBae, Byeong-Sooko
dc.date.accessioned2013-03-11T18:27:45Z-
dc.date.available2013-03-11T18:27:45Z-
dc.date.created2012-05-15-
dc.date.created2012-05-15-
dc.date.issued2012-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, v.15, no.4, pp.91 - 93-
dc.identifier.issn1099-0062-
dc.identifier.urihttp://hdl.handle.net/10203/99907-
dc.description.abstractSol-gel zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated at a low temperature of 250 degrees C using an ultraviolet (UV) photo-annealing process. A stable ZTO sol-gel solution was produced and showed considerable absorption in UV due to the incorporation of a chelating agent, acetylacetone, which also acts as a UV-activator. The UV photo-annealing and vacuum annealing improve the electrical performance of the ZTO TFT with mobility of 2 cm(2)/V.s by effective dissociation of organic groups and promotion of metal-oxide-metal bonds formation, confirmed by X-ray photoelectron spectroscopy of the ZTO films. (C) 2012 The Electrochemical Society. [DOI:10.1149/2.013204esl] All rights reserved.-
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectPHOTOCHEMICAL SOLUTION DEPOSITION-
dc.subjectROOM-TEMPERATURE-
dc.subjectSEMICONDUCTORS-
dc.subjectFABRICATION-
dc.titleUltraviolet Photo-Annealing Process for Low Temperature Processed Sol-Gel Zinc Tin Oxide Thin Film Transistors-
dc.typeArticle-
dc.identifier.wosid000300215100020-
dc.identifier.scopusid2-s2.0-84857347571-
dc.type.rimsART-
dc.citation.volume15-
dc.citation.issue4-
dc.citation.beginningpage91-
dc.citation.endingpage93-
dc.citation.publicationnameELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.identifier.doi10.1149/2.013204esl-
dc.contributor.localauthorBae, Byeong-Soo-
dc.type.journalArticleArticle-
dc.subject.keywordPlusPHOTOCHEMICAL SOLUTION DEPOSITION-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusFABRICATION-
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