The effect of the anneal temperature on the Er3+/Tm3+ energy transfer and subsequent luminescence from Er/Tm co-doped, silicon-rich silicon oxide films are investigated. The anneal necessary for optimum photoluminescence (PL)from the co-doped film is substantially different for only Er- or Tm-doped films. Analysis and modeling of PL intensity and time-resolved PL indicate higher optimum anneal temperature is due to the anneal temperature dependent Er-Tm addition, the optimization of combined ultrabroad Er/Fm luminescence was discussed interactions which is tailored by the change of Er/Fm doping ratio and anneal temperature. (C) 2010 Elsevier B.V. All rights reserved