DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Kun-Sik | ko |
dc.contributor.author | Baek, K. -H. | ko |
dc.contributor.author | Kim, D. P. | ko |
dc.contributor.author | Woo, J. -C. | ko |
dc.contributor.author | Do, L. -M. | ko |
dc.contributor.author | No, Kwang-Soo | ko |
dc.date.accessioned | 2013-03-11T11:10:18Z | - |
dc.date.available | 2013-03-11T11:10:18Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-12 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, v.257, no.4, pp.1347 - 1350 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | http://hdl.handle.net/10203/99105 | - |
dc.description.abstract | The remote plasma nitridation (RPN) of an HfO2 film using N-2 and NH3 has been investigated comparatively. X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses after post-deposition annealing (PDA) at 700 degrees show that a large amount of nitrogen is present in the bulk film as well as in the interfacial layer for the HfO2 film nitrided with NH3-RPN. It is also shown that the interfacial layer formed during RPN and PDA is a nitrogen-rich Hf-silicate. The C-V characteristics of an HfOxNy gate dielectric nitrided with NH3-RPN have a smaller equivalent oxide thickness than that nitrided with N-2-RPN in spite of its thicker interfacial layer. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | THERMAL-STABILITY | - |
dc.subject | THIN-FILMS | - |
dc.title | Effects of N-2 and NH3 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics | - |
dc.type | Article | - |
dc.identifier.wosid | 000282155700035 | - |
dc.identifier.scopusid | 2-s2.0-77957142043 | - |
dc.type.rims | ART | - |
dc.citation.volume | 257 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 1347 | - |
dc.citation.endingpage | 1350 | - |
dc.citation.publicationname | APPLIED SURFACE SCIENCE | - |
dc.identifier.doi | 10.1016/j.apsusc.2010.08.069 | - |
dc.contributor.localauthor | No, Kwang-Soo | - |
dc.contributor.nonIdAuthor | Baek, K. -H. | - |
dc.contributor.nonIdAuthor | Kim, D. P. | - |
dc.contributor.nonIdAuthor | Woo, J. -C. | - |
dc.contributor.nonIdAuthor | Do, L. -M. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Hafnium | - |
dc.subject.keywordAuthor | HfOxNy | - |
dc.subject.keywordAuthor | High-k dielectric | - |
dc.subject.keywordAuthor | Plasma nitridation | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | THIN-FILMS | - |
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