DEFECT CHARACTERIZATION OF HIGH THERMAL CONDUCTIVITY CaF2 DOPED AlN CERAMICS BY RAMAN SPECTROSCOPY

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dc.contributor.authorLee, Hyeon-Keunko
dc.contributor.authorKim, Do Kyungko
dc.date.accessioned2013-03-11T05:24:46Z-
dc.date.available2013-03-11T05:24:46Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-12-
dc.identifier.citationMODERN PHYSICS LETTERS B, v.23, no.31-32, pp.3869 - 3876-
dc.identifier.issn0217-9849-
dc.identifier.urihttp://hdl.handle.net/10203/98379-
dc.description.abstractCalcium fluoride additive was used to produce high thermal conductivity AlN ceramics which has no grain boundary phase. Thermal conductivity of AlN is determined by the point defect, represented as oxygen related defect, with in the AlN grain. The defect density characterization of high thermal conductivity CaF2 doped AlN ceramics after heat treatment was conducted by Raman spectroscopy. As measure Raman linewidth broadening, the point defect density variation after heat treatment and corresponding thermal conductivity change was investigated-
dc.languageEnglish-
dc.publisherWORLD SCIENTIFIC PUBL CO PTE LTD-
dc.subjectALUMINUM NITRIDE-
dc.titleDEFECT CHARACTERIZATION OF HIGH THERMAL CONDUCTIVITY CaF2 DOPED AlN CERAMICS BY RAMAN SPECTROSCOPY-
dc.typeArticle-
dc.identifier.wosid000273141400024-
dc.identifier.scopusid2-s2.0-73649100655-
dc.type.rimsART-
dc.citation.volume23-
dc.citation.issue31-32-
dc.citation.beginningpage3869-
dc.citation.endingpage3876-
dc.citation.publicationnameMODERN PHYSICS LETTERS B-
dc.identifier.doi10.1142/S0217984909021934-
dc.contributor.localauthorKim, Do Kyung-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorRaman spectroscopy-
dc.subject.keywordAuthorthermal conductivity-
dc.subject.keywordAuthoraluminum nitride-
dc.subject.keywordAuthorheat treatment-
dc.subject.keywordPlusALUMINUM NITRIDE-
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