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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Formation mechanisms of a nano-island array of Zn nanocrystals embedded in a SiO2 nanowire by using electrospinning and electron-beam irradiation

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dc.contributor.authorShin, J. W.ko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorRyu, J. T.ko
dc.contributor.authorKim, T. W.ko
dc.date.accessioned2013-03-11T04:13:35Z-
dc.date.available2013-03-11T04:13:35Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2011-05-
dc.identifier.citationCURRENT APPLIED PHYSICS, v.11, no.3, pp.687 - 691-
dc.identifier.issn1567-1739-
dc.identifier.urihttp://hdl.handle.net/10203/98222-
dc.description.abstractA nano-island array of approximately 7-nm-diameter Zn single crystals embedded in a SiO2 nanowire was created by using electrospinning and electron-beam irradiation. Bright-field transmission electron microscopy (TEM) images, high-resolution TEM (HRTEM) images, energy dispersive spectroscopy (EDS), and fast-Fourier-transformed electron diffraction patterns showed that Zn nanocrystals were created inside the SiO2 nanowire. The formation mechanisms of Zn nanoparticles embedded in a SiO2 nanowire due to the decomposition of ZnO and SiO2 nanoparticles are described on the basis of the HRTEM images and the EDS profiles. (C) 2010 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectQUANTUM-DOT-
dc.subjectSILICON NANOCRYSTALS-
dc.subjectROOM-TEMPERATURE-
dc.subjectSTIMULATED DESORPTION-
dc.subjectCOULOMB-BLOCKADE-
dc.subjectMEMORY DEVICES-
dc.subjectLAYERS-
dc.subjectSPECTROSCOPY-
dc.subjectTRANSISTORS-
dc.subjectMICROSCOPE-
dc.titleFormation mechanisms of a nano-island array of Zn nanocrystals embedded in a SiO2 nanowire by using electrospinning and electron-beam irradiation-
dc.typeArticle-
dc.identifier.wosid000288183300083-
dc.identifier.scopusid2-s2.0-79951674877-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue3-
dc.citation.beginningpage687-
dc.citation.endingpage691-
dc.citation.publicationnameCURRENT APPLIED PHYSICS-
dc.identifier.doi10.1016/j.cap.2010.11.033-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorRyu, J. T.-
dc.contributor.nonIdAuthorKim, T. W.-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorNanoparticles-
dc.subject.keywordAuthorMicrostructure-
dc.subject.keywordAuthorNanocomposites-
dc.subject.keywordPlusQUANTUM-DOT-
dc.subject.keywordPlusSILICON NANOCRYSTALS-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusSTIMULATED DESORPTION-
dc.subject.keywordPlusCOULOMB-BLOCKADE-
dc.subject.keywordPlusMEMORY DEVICES-
dc.subject.keywordPlusLAYERS-
dc.subject.keywordPlusSPECTROSCOPY-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusMICROSCOPE-
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