DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Seung Wook | ko |
dc.contributor.author | Sim, Kyu Ung | ko |
dc.contributor.author | Pawar, S. M. | ko |
dc.contributor.author | Moholkar, A. V. | ko |
dc.contributor.author | Jung, In Ok | ko |
dc.contributor.author | Yun, Jae Ho | ko |
dc.contributor.author | Moon, Jong-Ha | ko |
dc.contributor.author | Kim, Jin Hyeok | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.date.accessioned | 2013-03-11T01:25:05Z | - |
dc.date.available | 2013-03-11T01:25:05Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-04 | - |
dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, v.312, no.9, pp.1551 - 1556 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/97921 | - |
dc.description.abstract | 4 wt% Ga-doped ZnO (GZO) thin films have been prepared on the buffered and non-buffered Al2O3 (0 0 0 1) substrates by RF magnetron sputtering technique at a low growth temperature (250 degrees C). The effect of a ZnO buffer layer on the crystallinity, optical, and electrical properties of the GZO thin films is investigated. X-ray diffraction and transmission electron microscopy studies showed that the GZO thin film on a buffered substrate was epitaxially grown at a low growth temperature of 250 degrees C with an orientation relationship of (0001)[1 (1) over bar 20](GZO)parallel to(0001)[11 (2) over bar0](Al2O3). However, the GZO thin film on a non-buffered substrate was grown as a polycrystalline hexagonal wurtzite phase with c-axis preferred, out-of-plane orientation, and random in-plane orientation. The optical transmittance in the visible region and the electrical resistivity of the GZO thin film was improved by introducing a ZnO buffer layer from 70% to 80% and from 4.69 x 10(-3) to 1.01 x 10(-3) Omega cm, respectively. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | MAGNETRON SPUTTERING METHOD | - |
dc.subject | PULSED-LASER DEPOSITION | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | EPITAXIAL-GROWTH | - |
dc.subject | MORPHOLOGICAL PROPERTIES | - |
dc.subject | TRANSPARENT | - |
dc.subject | DEPENDENCE | - |
dc.subject | THICKNESS | - |
dc.subject | PLD | - |
dc.subject | DC | - |
dc.title | Effect of a ZnO buffer layer on the properties of Ga-doped ZnO thin films grown on Al2O3 (0001) substrates at a low growth temperature of 250 degrees C | - |
dc.type | Article | - |
dc.identifier.wosid | 000277530200015 | - |
dc.identifier.scopusid | 2-s2.0-77950298440 | - |
dc.type.rims | ART | - |
dc.citation.volume | 312 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 1551 | - |
dc.citation.endingpage | 1556 | - |
dc.citation.publicationname | JOURNAL OF CRYSTAL GROWTH | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Sim, Kyu Ung | - |
dc.contributor.nonIdAuthor | Pawar, S. M. | - |
dc.contributor.nonIdAuthor | Moholkar, A. V. | - |
dc.contributor.nonIdAuthor | Jung, In Ok | - |
dc.contributor.nonIdAuthor | Yun, Jae Ho | - |
dc.contributor.nonIdAuthor | Moon, Jong-Ha | - |
dc.contributor.nonIdAuthor | Kim, Jin Hyeok | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Epitaxial growth | - |
dc.subject.keywordAuthor | RF magnetron sputtering technique | - |
dc.subject.keywordAuthor | Transparent conducting oxide films (TCO) | - |
dc.subject.keywordAuthor | Single crystal growth | - |
dc.subject.keywordAuthor | Solar cells | - |
dc.subject.keywordPlus | MAGNETRON SPUTTERING METHOD | - |
dc.subject.keywordPlus | PULSED-LASER DEPOSITION | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | MORPHOLOGICAL PROPERTIES | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordPlus | PLD | - |
dc.subject.keywordPlus | DC | - |
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