DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Sang Mo | ko |
dc.contributor.author | Han, Seok Kyu | ko |
dc.contributor.author | Lee, Jae Wook | ko |
dc.contributor.author | Kim, Jung-Hyun | ko |
dc.contributor.author | Kim, Jae Goo | ko |
dc.contributor.author | Hong, Soon-Ku | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Song, Jung-Hoon | ko |
dc.contributor.author | Hong, Sun Ig | ko |
dc.contributor.author | Park, Jin Sub | ko |
dc.contributor.author | Yao, Takafumi | ko |
dc.date.accessioned | 2013-03-11T01:16:59Z | - |
dc.date.available | 2013-03-11T01:16:59Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-04 | - |
dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, v.312, no.9, pp.1557 - 1562 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/97891 | - |
dc.description.abstract | Microstructural analyses of of ZnO films on (1 1 1) Si substrates grown by plasma-assited molecualr beam epitaxy were performed in this study. Zn pre-deposition and its subsequent oxidation, in which either oxygen gas or oxygen-plasma was used as the oxygen source, were employed before ZnO growth. Both reflection high energy electron diffraction and x-ray pole figure showed the single crystalline features in the ZnO films with both post-oxidation of deposited Zn. Detailed transmission electron microscopy (TEM), however, revealed a locally multi-crystalline feature with 30 degrees-rotated domians at the near-interface regions in the ZnO film with oxidation by oxygen gas. ZnO film with oxidation of pre-deposited Zn by oxygen-plasma was observed to be single crystalline through the whole thickness by TEM. We observed a new epitaxial relationship, (0 0 0 1)ZnO//(1 1 1)Si and [0 1 (1) over bar 0]ZnO//[1 (1) over bar 0]Si, with a crystallographic rotation of ZnO with respect to Si by 30 degrees, which is energitically more favorable because of a lower lattice misfit (2.2%). No cracks were observed from the ZnO film with a thickness of 1.5 mu m, supporting the mechanical integrity of the film prepared in this study. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | VAPOR-PHASE EPITAXY | - |
dc.subject | THIN-FILMS | - |
dc.subject | LAYER | - |
dc.subject | GAN | - |
dc.title | Microstructural investigation of ZnO films grown on (111) Si substrates by plasma-assisted molecular beam epitaxy | - |
dc.type | Article | - |
dc.identifier.wosid | 000277530200016 | - |
dc.identifier.scopusid | 2-s2.0-77949918050 | - |
dc.type.rims | ART | - |
dc.citation.volume | 312 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 1557 | - |
dc.citation.endingpage | 1562 | - |
dc.citation.publicationname | JOURNAL OF CRYSTAL GROWTH | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2010.01.048 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Yang, Sang Mo | - |
dc.contributor.nonIdAuthor | Han, Seok Kyu | - |
dc.contributor.nonIdAuthor | Kim, Jung-Hyun | - |
dc.contributor.nonIdAuthor | Kim, Jae Goo | - |
dc.contributor.nonIdAuthor | Hong, Soon-Ku | - |
dc.contributor.nonIdAuthor | Song, Jung-Hoon | - |
dc.contributor.nonIdAuthor | Hong, Sun Ig | - |
dc.contributor.nonIdAuthor | Park, Jin Sub | - |
dc.contributor.nonIdAuthor | Yao, Takafumi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Characterization | - |
dc.subject.keywordAuthor | Molecular beam epitaxy | - |
dc.subject.keywordAuthor | Oxides | - |
dc.subject.keywordAuthor | Zinc compounds | - |
dc.subject.keywordAuthor | Semiconducting II-VI materials | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | GAN | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.