NEGATIVE DIFFERENTIAL RESISTANCE; FIELD-EFFECT TRANSISTORS; CURRENT-VOLTAGE CHARACTERISTICS; SCANNING-TUNNELING-MICROSCOPY; RANDOM-ACCESS MEMORY; CARBON NANOTUBE; ROOM-TEMPERATURE; NANOWIRE NANOSENSORS; PHONON SCATTERING; SINGLE MOLECULES
CHEMICAL SOCIETY REVIEWS, v.38, no.8, pp.2319 - 2333
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