Subsurface Incorporation of Co Atoms into Si(100)

Abstract

The initial adsorption structures of Co on Si(100) were investigated using scanning tunneling microscopy (STM). Filled-state STM images showed bright protrusions at Si dimers. Density functional theory calculations demonstrated that Co atoms at subsurface interstitial sites beneath Si dimers are the most stable. Simulated STM images confirmed that the bright features observed at Si dimers were due to Co atoms incorporated at subsurface interstitial sites.