DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Ju-Ho | ko |
dc.contributor.author | Ahn, Cheol-Hyoun | ko |
dc.contributor.author | Hwang, Soo-Yeon | ko |
dc.contributor.author | Woo, Chang-Ho | ko |
dc.contributor.author | Park, Jin-Seong | ko |
dc.contributor.author | Cho, Hyung-Koun | ko |
dc.contributor.author | Lee, Jeong-Yong | ko |
dc.date.accessioned | 2013-03-10T23:50:28Z | - |
dc.date.available | 2013-03-10T23:50:28Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-08 | - |
dc.identifier.citation | THIN SOLID FILMS, v.519, pp.6801 - 6805 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/97721 | - |
dc.description.abstract | The strong correlation between the microstructural characteristics of ZnO channel layers grown at various temperatures by radio-frequency magnetron sputtering and the electrical performances of resulting bottom-gate thin film transistors (TFTs) was reported. Transmission electron microscopy revealed that increasing growth temperature enhanced degree of c-axis preferred orientation and enlarged width of columns in the ZnO films. The ZnO channel layers grown at 250 and 350 degrees C exhibited TFT saturation behavior. However, growing them at >= 350 degrees C produced small grains in the junctions of ZnO/SiO(2) interface and grain boundaries, which led to hump behavior in TFT transfer curve caused by formation of additional boundaries. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | OXIDE | - |
dc.subject | PASSIVATION | - |
dc.subject | QUALITY | - |
dc.subject | LAYERS | - |
dc.title | Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000294790900036 | - |
dc.identifier.scopusid | 2-s2.0-80051546462 | - |
dc.type.rims | ART | - |
dc.citation.volume | 519 | - |
dc.citation.beginningpage | 6801 | - |
dc.citation.endingpage | 6805 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.contributor.localauthor | Lee, Jeong-Yong | - |
dc.contributor.nonIdAuthor | Ahn, Cheol-Hyoun | - |
dc.contributor.nonIdAuthor | Woo, Chang-Ho | - |
dc.contributor.nonIdAuthor | Park, Jin-Seong | - |
dc.contributor.nonIdAuthor | Cho, Hyung-Koun | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | Hump | - |
dc.subject.keywordAuthor | Microstructure | - |
dc.subject.keywordAuthor | Ostwald ripening | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | QUALITY | - |
dc.subject.keywordPlus | LAYERS | - |
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