DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Woon-Ik | ko |
dc.contributor.author | Yoon, Jong-Moon | ko |
dc.contributor.author | Park, Moon-Kyu | ko |
dc.contributor.author | Lee, Jin-Sup | ko |
dc.contributor.author | Kim, Sung-Kyu | ko |
dc.contributor.author | Jeong, Jae-Won | ko |
dc.contributor.author | Kim, Kyung-Ho | ko |
dc.contributor.author | Jeong, Hu-Young | ko |
dc.contributor.author | Jeon, Seok-Woo | ko |
dc.contributor.author | No, Kwang-Soo | ko |
dc.contributor.author | Lee, Jeong-Yong | ko |
dc.contributor.author | Jung, Yeon-Sik | ko |
dc.date.accessioned | 2013-03-09T22:31:36Z | - |
dc.date.available | 2013-03-09T22:31:36Z | - |
dc.date.created | 2012-04-12 | - |
dc.date.created | 2012-04-12 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.citation | NANO LETTERS, v.12, no.3, pp.1235 - 1240 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/97671 | - |
dc.description.abstract | We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | BLOCK-COPOLYMER LITHOGRAPHY | - |
dc.subject | SEQUENTIAL INFILTRATION SYNTHESIS | - |
dc.subject | RESISTIVE SWITCHES | - |
dc.subject | PATTERNED MEDIA | - |
dc.subject | MEMORY | - |
dc.subject | ARRAYS | - |
dc.subject | POLYDIMETHYLSILOXANE | - |
dc.subject | GRAPHOEPITAXY | - |
dc.subject | TEMPLATES | - |
dc.subject | NANOLITHOGRAPHY | - |
dc.title | Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000301406800020 | - |
dc.identifier.scopusid | 2-s2.0-84858167699 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 1235 | - |
dc.citation.endingpage | 1240 | - |
dc.citation.publicationname | NANO LETTERS | - |
dc.identifier.doi | 10.1021/nl203597d | - |
dc.contributor.localauthor | Jeon, Seok-Woo | - |
dc.contributor.localauthor | No, Kwang-Soo | - |
dc.contributor.localauthor | Lee, Jeong-Yong | - |
dc.contributor.localauthor | Jung, Yeon-Sik | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Block copolymer | - |
dc.subject.keywordAuthor | self-assembly | - |
dc.subject.keywordAuthor | resistive memory | - |
dc.subject.keywordAuthor | nanodot | - |
dc.subject.keywordAuthor | Pt | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordPlus | BLOCK-COPOLYMER LITHOGRAPHY | - |
dc.subject.keywordPlus | SEQUENTIAL INFILTRATION SYNTHESIS | - |
dc.subject.keywordPlus | RESISTIVE SWITCHES | - |
dc.subject.keywordPlus | PATTERNED MEDIA | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | POLYDIMETHYLSILOXANE | - |
dc.subject.keywordPlus | GRAPHOEPITAXY | - |
dc.subject.keywordPlus | TEMPLATES | - |
dc.subject.keywordPlus | NANOLITHOGRAPHY | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.