DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Seok Kyu | ko |
dc.contributor.author | Hong, Soon-Ku | ko |
dc.contributor.author | Lee, Jae Wook | ko |
dc.contributor.author | Kim, Jae Goo | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Hong, Sun Ig | ko |
dc.contributor.author | Park, Jin Sub | ko |
dc.contributor.author | Ihm, Young Eon | ko |
dc.contributor.author | Ha, Jun-Seok | ko |
dc.contributor.author | Yao, Takafumi | ko |
dc.date.accessioned | 2013-03-09T21:52:25Z | - |
dc.date.available | 2013-03-09T21:52:25Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.citation | THIN SOLID FILMS, v.519, no.19, pp.6394 - 6398 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/97567 | - |
dc.description.abstract | The effects of growth temperatures (in a wide range from 100 to 800 degrees C) on properties of a-plane (11 (2) over bar0) ZnO films grown on r-plane (1 (1) over bar 02) sapphire substrates by plasma-assisted molecular beam epitaxy were investigated. The film was grown as polycrystalline at 100 degrees C, but grown as single crystalline at the temperatures from 200 to 800 degrees C without any mixture of c-plane (0001) ZnO and m-plane (10 (1) over bar0) ZnO. The single crystalline ZnO films showed anisotropic surface morphology with the conglomerated granules or striations along the [0001](ZnO) direction. The ZnO film grown at 400 degrees C showed better crystal quality than others. It showed the smallest full width at half maximums of 0.450 degrees and 0.297 degrees for (11 (2) over bar0) x-ray omega rocking curves under the measuring configuration with the omega axis parallel and perpendicular to the < 0001 >(ZnO) and directions, respectively, and 0.387 degrees for (10 (1) over bar1) omega rocking curve. The threading dislocation and the stacking fault densities were determined to be similar to 3.7 x 10(10) cm(-2) and similar to 8.5 x 10(4) cm(-1) for the ZnO film grown at 400 degrees C. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | NONPOLAR ZNO | - |
dc.subject | GAN | - |
dc.subject | EMISSION | - |
dc.title | Properties of (11-20) a-plane ZnO films on sapphire substrates grown at different temperatures by plasma-assisted molecular beam epitaxy | - |
dc.type | Article | - |
dc.identifier.wosid | 000292720000035 | - |
dc.identifier.scopusid | 2-s2.0-79958214322 | - |
dc.type.rims | ART | - |
dc.citation.volume | 519 | - |
dc.citation.issue | 19 | - |
dc.citation.beginningpage | 6394 | - |
dc.citation.endingpage | 6398 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Han, Seok Kyu | - |
dc.contributor.nonIdAuthor | Hong, Soon-Ku | - |
dc.contributor.nonIdAuthor | Kim, Jae Goo | - |
dc.contributor.nonIdAuthor | Hong, Sun Ig | - |
dc.contributor.nonIdAuthor | Park, Jin Sub | - |
dc.contributor.nonIdAuthor | Ihm, Young Eon | - |
dc.contributor.nonIdAuthor | Ha, Jun-Seok | - |
dc.contributor.nonIdAuthor | Yao, Takafumi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Molecular beam epitaxy | - |
dc.subject.keywordAuthor | Thin film | - |
dc.subject.keywordAuthor | Epitaxy | - |
dc.subject.keywordAuthor | Zinc oxide | - |
dc.subject.keywordAuthor | Nonpolar | - |
dc.subject.keywordAuthor | Semiconductor | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | NONPOLAR ZNO | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | EMISSION | - |
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