DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ryu, Seong-Wan | ko |
dc.contributor.author | Han, Jin-Woo | ko |
dc.contributor.author | Kim, Chung-Jin | ko |
dc.contributor.author | Kim, Sung-Ho | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-09T18:14:05Z | - |
dc.date.available | 2013-03-09T18:14:05Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-03 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v.53, no.3, pp.389 - 391 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/97100 | - |
dc.description.abstract | This paper describes a unified memory (URAM) that utilizes a nanocrystal SOI MOSFET for multi-functional applications of both nonvolatile memory (NVM) and capacitorless 1T-DRAM. By using a discrete storage node (Ag nanocrystal) as the floating gate of the NVM, high defect immunity and 2-bit/cell operation were achieved. The embedded nanocrystal NVM also showed 1T-DRAM operation (program/erase time = 100 ns) characteristics, which were realized by storing holes in the floating body of the SOI MOSFET, without requiring an external capacitor. Three-bit/cell operation was accomplished for different applications - 2-bits for nonvolatility and 1-bit for fast operation. (C) 2009 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | CELL | - |
dc.title | Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM | - |
dc.type | Article | - |
dc.identifier.wosid | 000264731300025 | - |
dc.identifier.scopusid | 2-s2.0-61349111989 | - |
dc.type.rims | ART | - |
dc.citation.volume | 53 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 389 | - |
dc.citation.endingpage | 391 | - |
dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
dc.identifier.doi | 10.1016/j.sse.2009.01.015 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | URAM | - |
dc.subject.keywordAuthor | 1T-DRAM | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | Nanocrystal | - |
dc.subject.keywordPlus | CELL | - |
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