SiGe MMIC power amplifier with on-chip lineariser for X-band applications

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dc.contributor.authorKim, H. S.ko
dc.contributor.authorKim, Ki-Youngko
dc.contributor.authorKim, W. Y.ko
dc.contributor.authorNoh, Y. S.ko
dc.contributor.authorYom, I. B.ko
dc.contributor.authorOh, I. Y.ko
dc.contributor.authorPark, Chul-Soonko
dc.date.accessioned2013-03-09T17:20:34Z-
dc.date.available2013-03-09T17:20:34Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-09-
dc.identifier.citationELECTRONICS LETTERS, v.45, no.20, pp.1036 - 48-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/96978-
dc.description.abstractAn X-band linear power amplifier with an on-chip lineariser is developed using a 0.25 mu m SiGe HBT BiCMOS process. The proposed on-chip lineariser improves the 1 dB compression to as much as 3.4 dB with no additional DC power consumption. Under a 3.3 V DC power supply, the single-stage cascode amplifier shows a measured small-signal gain of 12.2 dB and output P1 dB of 20.8 dBm, with power added efficiency of 27.4% at the operating frequency range 8.5-10.5 GHz.-
dc.languageEnglish-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.titleSiGe MMIC power amplifier with on-chip lineariser for X-band applications-
dc.typeArticle-
dc.identifier.wosid000270147100020-
dc.identifier.scopusid2-s2.0-70349481089-
dc.type.rimsART-
dc.citation.volume45-
dc.citation.issue20-
dc.citation.beginningpage1036-
dc.citation.endingpage48-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el.2009.1973-
dc.contributor.localauthorPark, Chul-Soon-
dc.contributor.nonIdAuthorKim, H. S.-
dc.contributor.nonIdAuthorKim, W. Y.-
dc.contributor.nonIdAuthorNoh, Y. S.-
dc.contributor.nonIdAuthorYom, I. B.-
dc.contributor.nonIdAuthorOh, I. Y.-
dc.type.journalArticleArticle-
dc.subject.keywordPlusPAE-
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