Hole doping effect on ferromagnetism in Mn-doped ZnO nanowires

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We investigate the magnetic properties of Mn-doped ZnO nanowires (NWs) using the local spin density approximation (LSDA) and the LSDA+U approach, where U represents the on-site Coulomb interaction. In carrier-free (Zn,Mn)O NWs, the majority Mn t(a) states are fully occupied, leading to an antiferromagnetic ground state. We examine the effect of additional p-type doping on the ferromagnetism by considering surface O dangling bonds, Zn vacancies, and N impurities. For all cases, localized hole carriers are generated in the majority t(a) states and promote a ferromagnetic ordering via double exchange interactions, similar to the trend of bulk (Zn,Mn)O. The ferromagnetic coupling tends to increase with increasing of the hole carrier density. (C) 2010 Elsevier B. V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2011-03
Language
English
Article Type
Article
Keywords

DILUTED MAGNETIC SEMICONDUCTORS; AB-INITIO; BAND-STRUCTURE; THIN-FILMS; MODEL; (ZN; CO

Citation

CURRENT APPLIED PHYSICS, v.11, pp.236 - 240

ISSN
1567-1739
URI
http://hdl.handle.net/10203/96840
Appears in Collection
PH-Journal Papers(저널논문)
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