Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

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dc.contributor.authorJeong, Seong-Junko
dc.contributor.authorKim, Doo-Inko
dc.contributor.authorKim, Sang Oukko
dc.contributor.authorHan, Tae Heeko
dc.contributor.authorKwon, Jung-Daeko
dc.contributor.authorPark, Jin-Seongko
dc.contributor.authorKwon, Se-Hunko
dc.date.accessioned2013-03-09T14:28:46Z-
dc.date.available2013-03-09T14:28:46Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2011-01-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.1, pp.671 - 674-
dc.identifier.issn1533-4880-
dc.identifier.urihttp://hdl.handle.net/10203/96601-
dc.description.abstractRu-TiN thin films were prepared from bis(ethylcyclopentadienyl)ruthenium and tetrakis(dimethylamino)titanium using plasma-enhanced atomic layer deposition (PEALD). The Ru and TiN were deposited sequentially to intermix TiN with Ru. The composition of Ru-TiN films was controlled precisely by changing the number of deposition cycles allocated to Ru, while fixing the number of deposition cycles allocated to TiN. Although both Ru and TIN thin films have a polycrystalline structure, the microstructure of the Ru-TiN films changed from a TiN-like polycrystalline structure to a nanocrystalline on increasing the Ru intermixing ratio. Moreover, the electrical resistivity of the Ru-0.67-TiN0.33 thin films is sufficiently low at 190 mu Omega.cm and was maintained even after O-2 annealing at 750 degrees C. Therefore, Ru-TiN thin films can be utilized as a oxygen diffusion barrier material for future dynamic (DRAM) and ferroelectric (FeRAM) random access memory capacitors.-
dc.languageEnglish-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectSTABILITY-
dc.titleImproved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition-
dc.typeArticle-
dc.identifier.wosid000286344400121-
dc.identifier.scopusid2-s2.0-79955803938-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue1-
dc.citation.beginningpage671-
dc.citation.endingpage674-
dc.citation.publicationnameJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.identifier.doi10.1166/jnn.2011.3222-
dc.contributor.localauthorKim, Sang Ouk-
dc.contributor.nonIdAuthorKim, Doo-In-
dc.contributor.nonIdAuthorKwon, Jung-Dae-
dc.contributor.nonIdAuthorPark, Jin-Seong-
dc.contributor.nonIdAuthorKwon, Se-Hun-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorPlasma-Enhanced Atomic Layer Deposition-
dc.subject.keywordAuthorOxygen Diffusion Barrier-
dc.subject.keywordAuthorRuthenium-Titanium Nitride-
dc.subject.keywordAuthorFRAM-
dc.subject.keywordAuthorDRAM-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusSTABILITY-
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