DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Jin-Woo | ko |
dc.contributor.author | Ahn, Jae-Hyuk | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-09T10:32:34Z | - |
dc.date.available | 2013-03-09T10:32:34Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-01 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.29, no.1, pp.110141 - 110144 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://hdl.handle.net/10203/96106 | - |
dc.description.abstract | A damage immune field effect transistor with a vacuum gate dielectric is presented. The device consists of a suspended silicon nanowire and an independently controlled double-gate. The vacuum gate dielectric with a thickness of 20 nm is formed by a sacrificial layer deposition and removal process. The vacuum gate dielectric is found to be resistant to radiation-induced damage. Furthermore, it shows a very high tolerance against hot-carrier stress. The excellent stability in the radiative environment and high electric field is attributed to the absence of material in the vacuum gate dielectric. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3520618] | - |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | INJECTION | - |
dc.subject | CHANNEL | - |
dc.subject | DEVICES | - |
dc.subject | MOSFET | - |
dc.subject | OXIDE | - |
dc.subject | MEMS | - |
dc.title | Damage immune field effect transistors with vacuum gate dielectric | - |
dc.type | Article | - |
dc.identifier.wosid | 000286679400017 | - |
dc.identifier.scopusid | 2-s2.0-79551622918 | - |
dc.type.rims | ART | - |
dc.citation.volume | 29 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 110141 | - |
dc.citation.endingpage | 110144 | - |
dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE TECHNOLOGY B | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Han, Jin-Woo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | INJECTION | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | MOSFET | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | MEMS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.