DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Min-Hyung | ko |
dc.contributor.author | Kwon, Yong-Min | ko |
dc.contributor.author | Pyo, Sung-Gyu | ko |
dc.contributor.author | Lee, Han-Choon | ko |
dc.contributor.author | Han, Jae-Won | ko |
dc.contributor.author | Paik, Kyung-Wook | ko |
dc.date.accessioned | 2013-03-09T08:06:50Z | - |
dc.date.available | 2013-03-09T08:06:50Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.citation | THIN SOLID FILMS, v.519, no.11, pp.3906 - 3913 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/95817 | - |
dc.description.abstract | The electromigration (EM) characteristics of super-thin aluminum-copper alloy (AlCu) interconnects for sub-0.13 mu m complementary metal-oxide-semiconductor logic technology were investigated by varying the AlCu underlayers and etched sidewall profile ofAlCu wire. Super-thin AlCu wire with a Ti/TiN underlayer and a smooth etched sidewall profile was confirmed to have the best EM resistance in terms of the mean-time-to-failure (MTTF) and the failure distribution. The Ti/TiN underlayer is believed to lead to a longer MTTF by dramatically reducing the effective current density at the super-thin AlCu film in the entire of EM test line with a smaller formation of TiAl(3) at the TiN/AlCu interface. The smooth etched sidewall profile is considered to induce a steeper EM failure distribution by removing the early EM failure at the rough sidewall of aluminum. In terms of the location of EM-induced voids, the super-thin AlCu film inhibits the formation of EM-induced voids directly under the tungsten via by insignificant current crowding at the via-metal line corner. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | TIAL3 FORMATION | - |
dc.subject | BILAYERS | - |
dc.subject | LINES | - |
dc.subject | TI | - |
dc.title | Effects of metal stacks and patterned metal profiles on the electromigration characteristics in super-thin AlCu interconnects for sub-0.13 mu m technology | - |
dc.type | Article | - |
dc.identifier.wosid | 000289333400083 | - |
dc.identifier.scopusid | 2-s2.0-79952739826 | - |
dc.type.rims | ART | - |
dc.citation.volume | 519 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 3906 | - |
dc.citation.endingpage | 3913 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.contributor.localauthor | Paik, Kyung-Wook | - |
dc.contributor.nonIdAuthor | Pyo, Sung-Gyu | - |
dc.contributor.nonIdAuthor | Lee, Han-Choon | - |
dc.contributor.nonIdAuthor | Han, Jae-Won | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | AlCu | - |
dc.subject.keywordAuthor | Interconnects | - |
dc.subject.keywordAuthor | Electromigration | - |
dc.subject.keywordAuthor | Current crowding | - |
dc.subject.keywordAuthor | AlCu underlayer | - |
dc.subject.keywordAuthor | Sidewall profile | - |
dc.subject.keywordPlus | TIAL3 FORMATION | - |
dc.subject.keywordPlus | BILAYERS | - |
dc.subject.keywordPlus | LINES | - |
dc.subject.keywordPlus | TI | - |
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