DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sul, Woo-Suk | ko |
dc.contributor.author | Oh, Jung-Hun | ko |
dc.contributor.author | Lee, Chae-Hun | ko |
dc.contributor.author | Cho, Gyu-Seong | ko |
dc.contributor.author | Lee, Wan-Gyu | ko |
dc.contributor.author | Kim, Sam-Dong | ko |
dc.contributor.author | Rhee, Jin-Koo | ko |
dc.date.accessioned | 2013-03-09T06:33:44Z | - |
dc.date.available | 2013-03-09T06:33:44Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.31, no.1, pp.41 - 43 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/95603 | - |
dc.description.abstract | Si photomultipliers with three different guard-ring structures are fabricated, and a detailed comparative study on their device performances is performed. The virtual guard-ring structure shows a high-resolution full width at half maximum in the gamma spectrum and a high breakdown voltage of similar to 66 V but the lowest fill factor of 46.6%-59.8% among the examined structures. The best charge conversion performance, gain, and fill factor (67.1%) are achieved with the trench guard-ring structure. However, this structure shows a low energy resolution, which is supposed to be due to the trench-associated defects. The performance of the N-implantation guard-ring structure is intermediate in most aspects of the device performance compared to the other structures. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | IRST | - |
dc.title | Guard-Ring Structures for Silicon Photomultipliers | - |
dc.type | Article | - |
dc.identifier.wosid | 000273090800015 | - |
dc.identifier.scopusid | 2-s2.0-72949110365 | - |
dc.type.rims | ART | - |
dc.citation.volume | 31 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 41 | - |
dc.citation.endingpage | 43 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2009.2035829 | - |
dc.contributor.localauthor | Cho, Gyu-Seong | - |
dc.contributor.nonIdAuthor | Sul, Woo-Suk | - |
dc.contributor.nonIdAuthor | Oh, Jung-Hun | - |
dc.contributor.nonIdAuthor | Lee, Wan-Gyu | - |
dc.contributor.nonIdAuthor | Kim, Sam-Dong | - |
dc.contributor.nonIdAuthor | Rhee, Jin-Koo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Breakdown | - |
dc.subject.keywordAuthor | fill factor | - |
dc.subject.keywordAuthor | full width at half maximum (FWHM) | - |
dc.subject.keywordAuthor | gamma spectrum | - |
dc.subject.keywordAuthor | guard-ring structure | - |
dc.subject.keywordAuthor | Si photomultiplier (SiPM) | - |
dc.subject.keywordPlus | IRST | - |
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