DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, JW | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | No, YS | ko |
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Choi, WK | ko |
dc.date.accessioned | 2013-03-09T06:01:28Z | - |
dc.date.available | 2013-03-09T06:01:28Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-02 | - |
dc.identifier.citation | JOURNAL OF ALLOYS AND COMPOUNDS, v.509, no.6, pp.3132 - 3135 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | http://hdl.handle.net/10203/95547 | - |
dc.description.abstract | ZnO nanocrystals embedded in an amorphous Zn2xSi1-xO2 layer inserted between a ZnO thin film and a p-Si (100) substrate were formed by magnetron sputtering and thermal annealing. High-resolution transmission electron microscopy (HRTEM) images showed that ZnO nanocrystals were embedded in the Zn2xSi1-xO2 layer inserted into a ZnO/Si heterostructure. The {01 (1) over bar0} planes were observed for the ZnO nanocrystals with a [0001] orientation direction, and the {01 (1) over bar1} and the {0001} planes were observed for the ZnO nanocrystal with a [2 (1) over bar(1) over bar0] orientation direction. The formation of ZnO nanocrystals consisting of the most stable {0001} and (01 (1) over bar1) facet planes was attributed to atomic rearrangement of Zn and 0 atoms to reduce the surface energy during the thermal annealing and the cooling processes. The formation mechanisms for the ZnO nanocrystals embedded in an amorphous Zn2xSi1-xO2 layer inserted into a ZnO/p-Si (100) heterostructure were described on the basis of the HRTEM images. (C)2010 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | LIGHT-EMITTING DEVICES | - |
dc.subject | SOLAR-CELLS | - |
dc.subject | NANOPARTICLES | - |
dc.subject | FABRICATION | - |
dc.title | Formation mechanisms of ZnO nanocrystals embedded in an amorphous Zn2xSi1-xO2 layer due to sputtering and annealing | - |
dc.type | Article | - |
dc.identifier.wosid | 000287058100093 | - |
dc.identifier.scopusid | 2-s2.0-78651376693 | - |
dc.type.rims | ART | - |
dc.citation.volume | 509 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 3132 | - |
dc.citation.endingpage | 3135 | - |
dc.citation.publicationname | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.identifier.doi | 10.1016/j.jallcom.2010.12.021 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Shin, JW | - |
dc.contributor.nonIdAuthor | No, YS | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Choi, WK | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Oxide materials | - |
dc.subject.keywordAuthor | Semiconductors | - |
dc.subject.keywordAuthor | Surfaces and interfaces | - |
dc.subject.keywordAuthor | Thin films | - |
dc.subject.keywordAuthor | Atomic scale structure | - |
dc.subject.keywordAuthor | Transmission electron microscopy | - |
dc.subject.keywordAuthor | TEM | - |
dc.subject.keywordPlus | LIGHT-EMITTING DEVICES | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | FABRICATION | - |
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