DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, HS | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2009-06-18T01:18:58Z | - |
dc.date.available | 2009-06-18T01:18:58Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-06 | - |
dc.identifier.citation | ELECTRONIC MATERIALS LETTERS, v.3, no.2, pp.57 - 62 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/9540 | - |
dc.description.abstract | A COSi2 layer was grown in-situ on heavily arsenic-doped Si by reactive chemical vapor deposition of a Co(eta(5)-C5H5)(CO)(2) precursor at 650 degrees C. The nucleation and growth mechanism were investigated in comparison with those on undoped Si. In the initial deposition stage, discrete COSi2 plates with a large area of the {111} coherent planes were nucleated with a deeper penetration depth and a higher density of twinned structure compared to the plates on undoped Si. A thicker CoSi2 layer is necessary for an epitaxial layer with uniform thickness on the heavily arsenic-doped Si. Analyses of the X-ray rocking curve and residual stress indicated that the high As concentration in COSi2 reduced the lattice mismatch between Si and CoSi2 and reduced the lattice strain. | - |
dc.description.sponsorship | This work was financially supported by the Korea Research Foundation through the Center for Nano Interface Research(KRF-2005-005-J09702). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | Korean Inst Metals Materials | - |
dc.subject | SI(100) SUBSTRATE | - |
dc.subject | LAYER | - |
dc.subject | SILICON | - |
dc.subject | STABILITY | - |
dc.title | Effect of heavy arsenic doping on the in-situ growth of epitaxial COSi2 on (100) si using reactive chemical vapor deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000255333700003 | - |
dc.type.rims | ART | - |
dc.citation.volume | 3 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 57 | - |
dc.citation.endingpage | 62 | - |
dc.citation.publicationname | ELECTRONIC MATERIALS LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Lee, HS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | COSi2 silicide | - |
dc.subject.keywordAuthor | epitaxial growth | - |
dc.subject.keywordAuthor | carbon mediated growth | - |
dc.subject.keywordAuthor | in-situ growth | - |
dc.subject.keywordPlus | SI(100) SUBSTRATE | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | STABILITY | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.