DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Cheol Hyoun | ko |
dc.contributor.author | Woo, Chang Ho | ko |
dc.contributor.author | Hwang, SooYeon | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Cho, Hyung Koun | ko |
dc.contributor.author | Cho, Hyoung Jin | ko |
dc.contributor.author | Yeom, Geun Young | ko |
dc.date.accessioned | 2013-03-09T04:06:48Z | - |
dc.date.available | 2013-03-09T04:06:48Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-06 | - |
dc.identifier.citation | SURFACE AND INTERFACE ANALYSIS, v.42, pp.955 - 958 | - |
dc.identifier.issn | 0142-2421 | - |
dc.identifier.uri | http://hdl.handle.net/10203/95314 | - |
dc.description.abstract | We utilized atomic layer deposition (ALD) for the growth of the ZnO channel layers in the oxide thin-film-transistors (TFTs) with a bottom-gate structure using a SiO(2)/p-Si substrate. For fundamental study, the effect of the channel thickness and thermal treatment on the TFT performance was investigated. The growth modes for the ALD-grown ZnO layer changed from island growth to layer-by-layer growth at thicknesses of >7.5 nm with highly resistive properties. A channel thickness of 17 nm resulted in good TFT behavior with an on/off current ratio of >10(6) and a field effect mobility of 2.9 without the need for thermal annealing. However, further increases in the channel thickness resulted in a deterioration of the TFT performance, or no saturation. The ALD-grown ZnO layers showed reduced electrical resistivity and carrier density after thermal treatment in oxygen. Copyright (C) 2010 John Wiley & Sons, Ltd. | - |
dc.language | English | - |
dc.publisher | JOHN WILEY & SONS LTD | - |
dc.title | Influence of active layer thickness and annealing in zinc oxide TFT grown by atomic layer deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000281149700108 | - |
dc.identifier.scopusid | 2-s2.0-77954247557 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.beginningpage | 955 | - |
dc.citation.endingpage | 958 | - |
dc.citation.publicationname | SURFACE AND INTERFACE ANALYSIS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Ahn, Cheol Hyoun | - |
dc.contributor.nonIdAuthor | Woo, Chang Ho | - |
dc.contributor.nonIdAuthor | Cho, Hyung Koun | - |
dc.contributor.nonIdAuthor | Cho, Hyoung Jin | - |
dc.contributor.nonIdAuthor | Yeom, Geun Young | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | ZnO TFT | - |
dc.subject.keywordAuthor | ALD | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
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