DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ryu, Seong-Wan | ko |
dc.contributor.author | Lee, Jong-Won | ko |
dc.contributor.author | Han, Jin-Woo | ko |
dc.contributor.author | Kim, Sung-Ho | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-09T03:03:58Z | - |
dc.date.available | 2013-03-09T03:03:58Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-03 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.3, pp.377 - 382 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/95202 | - |
dc.description.abstract | A double-stacked nanocrystal (DSNC) Hash memory is presented for improvement of both program/erase speed and data retention time. Four combinations of nickel (Ni) and gold (An) (Ni/Ni, Au/Au, Ni/Au, and Au/Ni) are used as charge storage DSNC materials and are compared from the perspective of memory performance, Through experimental results for P/E efficiency and retention time, the optimized energy band lineup for faster P/E, and longer charge retention is presented. A combination of a deep potential well at the top and a shallow potential well at the bottom exhibits optimized performance in P/E, and this combination also shows the longest data retention characteristics. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | RETENTION | - |
dc.subject | DEVICES | - |
dc.subject | OXIDE | - |
dc.subject | GATE | - |
dc.title | Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application | - |
dc.type | Article | - |
dc.identifier.wosid | 000264019300004 | - |
dc.identifier.scopusid | 2-s2.0-62749140701 | - |
dc.type.rims | ART | - |
dc.citation.volume | 56 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 377 | - |
dc.citation.endingpage | 382 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2008.2011677 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Au and Ni | - |
dc.subject.keywordAuthor | double-stacked nanocrystal (DSNC) | - |
dc.subject.keywordAuthor | energy band lineup | - |
dc.subject.keywordAuthor | flash memory | - |
dc.subject.keywordAuthor | nanocrystal (NC) | - |
dc.subject.keywordAuthor | nanocrystal floating-gate memory (NFGM) | - |
dc.subject.keywordAuthor | nonvolatile memory (NVM) | - |
dc.subject.keywordAuthor | program/erase (P/E) speed | - |
dc.subject.keywordAuthor | retention time | - |
dc.subject.keywordPlus | RETENTION | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | GATE | - |
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