DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Ki Hwan | - |
dc.contributor.author | Larina, Liudmila | - |
dc.contributor.author | Yoon, Kyung Hoon | - |
dc.contributor.author | Konagai, Makoto | - |
dc.contributor.author | Ahn, Byung Tae | - |
dc.date.accessioned | 2009-06-17T07:43:03Z | - |
dc.date.available | 2009-06-17T07:43:03Z | - |
dc.date.issued | 2005 | - |
dc.identifier.citation | Materials Science Forum, Vol.475-479, pp.1681-1684 | en |
dc.identifier.issn | 0255-5476 | - |
dc.identifier.uri | http://hdl.handle.net/10203/9516 | - |
dc.description.abstract | As an alternative to a CdS buffer layer for Cu(In,Ga)Se2-based solar cells, we prepared In-based buffer layers using a chemical bath deposition method. XPS and XRD analyses revealed that the In-based buffer layers contained In2S3 and InOOH phases. Compared with CdS film, the In-based film, Inx(OOH,S)y, had higher optical transmittance and a shorter absorption edge. The Cu(In,Ga)(Se,S)2 solar cell with the Inx(OOH,S)y buffer layer had better photovoltaic properties than that with a conventional CdS buffer layer. The conversion efficiency of the best Cu(In,Ga)(Se,S)2 solar cell with Inx(OOH,S)y buffer layer was 12.55 % for an active area of 0.19 cm2. | en |
dc.description.sponsorship | The Korea Ministry of Science and Technology financially supported this work. | en |
dc.language.iso | en_US | en |
dc.publisher | Trans Tech Publications | en |
dc.subject | Cd-free buffer | en |
dc.subject | Inx(OOH,S)y | en |
dc.subject | Cu(In,Ga)Se2 | en |
dc.subject | solar cells | en |
dc.title | Growth of an Inx(OOH,S)y Buffer Layer and Its Application to Cu(In,Ga)(Se,S)2 Solar Cells | en |
dc.type | Book | en |
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