Low-temperature crystallization of amorphous Si films using AICl(3) vapor
It is known that the direct contact between Al and a-Si enhances the crystallization of a-Si film. But the poly-Si films crystallized by the direct contact of Al metal film suffer the problems of rough surface and voids. In our study, we utilized for the first time the AlCl3 vapor instead of Al metal film to enhance crystallization. The AlCl3 vapor successfully enhanced the crystallization of a-Si films so that the crystallization was completed in 5 h at 540degreesC. Moreover, the surface of the crystallized film was as smooth as that of the a-Si film and no voids were found. The Al incorporation into the poly-Si film was confirmed using secondary ion mass spectroscopy. (C) 2002 Elsevier Science B.V. All rights reserved.
- Publisher
- ELSEVIER SCIENCE BV
- Issue Date
- 2002-10
- Language
- English
- Article Type
- Article
- Keywords
ALUMINUM-INDUCED CRYSTALLIZATION; SILICON THIN-FILMS; POLYCRYSTALLINE SILICON; LAYER EXCHANGE; DEPOSITION
- Citation
SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.74, no.1-4, pp.315 - 321
- ISSN
- 0927-0248
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 13 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.