DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yun, Dae-Keun | ko |
dc.contributor.author | Kim, Ki-Don | ko |
dc.contributor.author | Kim, Sung-Ho | ko |
dc.contributor.author | Lee, Ji-Hye | ko |
dc.contributor.author | Park, Hyeong-Ho | ko |
dc.contributor.author | Jeong, Jun-Ho | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Choi, Dae-Geun | ko |
dc.date.accessioned | 2013-03-09T00:24:05Z | - |
dc.date.available | 2013-03-09T00:24:05Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-11 | - |
dc.identifier.citation | NANOTECHNOLOGY, v.20, no.44 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10203/94795 | - |
dc.description.abstract | Step and flash imprint lithography (SFIL) is a promising method recently used for next generation lithographic technology because it is a high-speed process that can be carried out at room temperature and low pressures. Improvements made to SFIL enable the replication of crossbar patterns with a high resolution and the development of suitable materials and techniques to achieve high resolution capability. In this study, SFIL is used to fabricate high-density random access crossbar arrays based on a NiO resistive switching system. The bottom and top electrodes are transferred onto silicon wafers perpendicular to each electrode using the inductively coupled plasma reactive ion etching (ICP-RIE) technique. Direct metal etching without a wet-based process minimizes damage to the electrode surface. The I-V curves of individual active cells (70 x 70 nm(2)) for crossbar arrays reveal the unipolar resistive switching (RS) behaviour of the fabricated device. A high off/on resistance ratio (>10(4)) and reproducible resistance switching characteristics for each active cell were found in different fields and for different wafers. The experimental data indicate that high-density crossbar arrays can be well replicated and that the electrical performance of these arrays is reliable. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | NM HALF-PITCH | - |
dc.subject | TRANSITION-METAL OXIDES | - |
dc.subject | NANOIMPRINT LITHOGRAPHY | - |
dc.subject | MEMORY | - |
dc.title | Mass fabrication of resistive random access crossbar arrays by step and flash imprint lithography | - |
dc.type | Article | - |
dc.identifier.wosid | 000270562900011 | - |
dc.type.rims | ART | - |
dc.citation.volume | 20 | - |
dc.citation.issue | 44 | - |
dc.citation.publicationname | NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1088/0957-4484/20/44/445305 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Yun, Dae-Keun | - |
dc.contributor.nonIdAuthor | Kim, Ki-Don | - |
dc.contributor.nonIdAuthor | Lee, Ji-Hye | - |
dc.contributor.nonIdAuthor | Park, Hyeong-Ho | - |
dc.contributor.nonIdAuthor | Jeong, Jun-Ho | - |
dc.contributor.nonIdAuthor | Choi, Dae-Geun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | NM HALF-PITCH | - |
dc.subject.keywordPlus | TRANSITION-METAL OXIDES | - |
dc.subject.keywordPlus | NANOIMPRINT LITHOGRAPHY | - |
dc.subject.keywordPlus | MEMORY | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.