DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nam I. | ko |
dc.contributor.author | Moon H. | ko |
dc.contributor.author | Kwon K. | ko |
dc.date.accessioned | 2013-03-09T00:20:08Z | - |
dc.date.available | 2013-03-09T00:20:08Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v.45, no.11, pp.548 - 549 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/10203/94789 | - |
dc.description.abstract | A highly linear, low noise differential down-converter employing a new linearisation technique derived from composite transistors, i.e. nMOSFET and vertical NPN BJT, is proposed and implemented in a 0.18 mu m CMOS technology. It draws 1 mA from a 2.5 V supply voltage and has a voltage gain of 13 dB, a double-sideband noise figure of 9.5 dB, an IIP2 of more than 49 dBm, and an IIP3 of 6.5 dBm. | - |
dc.language | English | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.subject | TRANSISTOR | - |
dc.title | Highly linear and low noise differential bipolar MOSFET down-converter in CMOS process | - |
dc.type | Article | - |
dc.identifier.wosid | 000266264900014 | - |
dc.identifier.scopusid | 2-s2.0-66249126517 | - |
dc.type.rims | ART | - |
dc.citation.volume | 45 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 548 | - |
dc.citation.endingpage | 549 | - |
dc.citation.publicationname | ELECTRONICS LETTERS | - |
dc.identifier.doi | 10.1049/el.2009.3676 | - |
dc.contributor.localauthor | Kwon K. | - |
dc.contributor.nonIdAuthor | Nam I. | - |
dc.contributor.nonIdAuthor | Moon H. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | TRANSISTOR | - |
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