DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zhang G. | ko |
dc.contributor.author | Wu Z. | ko |
dc.contributor.author | Jeong J.-H. | ko |
dc.contributor.author | Jeong D.S. | ko |
dc.contributor.author | Yoo W.J. | ko |
dc.contributor.author | Cheong B.-K. | ko |
dc.date.accessioned | 2013-03-08T23:20:53Z | - |
dc.date.available | 2013-03-08T23:20:53Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v.11, no.2, pp.E79 - E81 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | http://hdl.handle.net/10203/94633 | - |
dc.description.abstract | We demonstrate a high-speed multi-level cell (MLC) storage for the phase-change memory using a Ge-doped SbTe (GeST) for the first time with a conventional pore-type device structure and a conventional modulated-current writing method. The GeST was selected to have a low Sb-to-Te ratio of 1.8 (GeST(L)), rendering a diminished growth rate relative to the case of a high Sb-to-Te ratio typically of fast, growth-dominated crystallization. With a writing time of less than 100 ns, each of the 4 resistance levels separated from one another at least by the factor of 4 is shown to form reliably and stay with a low drift coefficient of similar to 0.1. GeST(L) may be regarded as a promising material for high-speed MLC phase-change memory application. (C) 2011 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTe | - |
dc.type | Article | - |
dc.identifier.wosid | 000294208600018 | - |
dc.identifier.scopusid | 2-s2.0-79960916477 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | E79 | - |
dc.citation.endingpage | E81 | - |
dc.citation.publicationname | CURRENT APPLIED PHYSICS | - |
dc.identifier.doi | 10.1016/j.cap.2011.01.021 | - |
dc.contributor.nonIdAuthor | Zhang G. | - |
dc.contributor.nonIdAuthor | Jeong J.-H. | - |
dc.contributor.nonIdAuthor | Jeong D.S. | - |
dc.contributor.nonIdAuthor | Yoo W.J. | - |
dc.contributor.nonIdAuthor | Cheong B.-K. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Multi-level cell | - |
dc.subject.keywordAuthor | Phase-change memory | - |
dc.subject.keywordAuthor | Ge-doped SbTe | - |
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