Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio

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dc.contributor.authorJeong J.-H.ko
dc.contributor.authorLee H.S.ko
dc.contributor.authorLee S.ko
dc.contributor.authorLee T.S.ko
dc.contributor.authorKim W.M.ko
dc.contributor.authorZhe W.ko
dc.contributor.authorKim S.C.ko
dc.contributor.authorOh K.H.ko
dc.contributor.authorCheong B.-K.ko
dc.date.accessioned2013-03-08T20:55:47Z-
dc.date.available2013-03-08T20:55:47Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-
dc.identifier.citationJOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.3-
dc.identifier.issn0022-3727-
dc.identifier.urihttp://hdl.handle.net/10203/94272-
dc.description.abstractA phase change memory (PCM) utilizes resistivity changes accompanying fast transitions from an amorphous to a crystalline phase ( SET) and vice versa ( RESET). An investigation was made on the SET characteristics of PCM cells with Ge-doped SbTe (Ge-ST) materials of two different Sb : Te ratios (4.53 and 2.08). For the material of higher Sb : Te ( 4.53), a SET operation was completed within several tens of nanoseconds via nucleation-free crystallization whereas the material of lower Sb : Te ( 2.08) rendered a slower SET operation requiring several hundred nanoseconds for a nucleation-mediated crystallization. From measurements of nucleation and growth kinetics via laser-induced crystallization, the observed SET characteristics of the former case were found to derive from a growth time about 103 times shorter than the nucleation time and those of the latter from a much shorter nucleation time as well as a longer growth time than in the former case. The measured nucleation kinetics of the lower Sb : Te ( 2.08) material is unexpected from the existing data, which has led us to advance an interesting finding that there occurs a trend-reversing change in the nucleation kinetics of the Ge-ST materials around the eutectic composition ( Sb : Te similar to 2.6); nucleation is accelerated with the increase in the Sb : Te ratio above Sb : Te of 2.6, but with a decrease in the Sb : Te ratio below it.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.subjectPHASE-CHANGE MEDIA-
dc.subjectFILMS-
dc.subjectNUCLEATION-
dc.subjectBEHAVIOR-
dc.titleCrystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio-
dc.typeArticle-
dc.identifier.wosid000262449000020-
dc.identifier.scopusid2-s2.0-63649143924-
dc.type.rimsART-
dc.citation.volume42-
dc.citation.issue3-
dc.citation.publicationnameJOURNAL OF PHYSICS D-APPLIED PHYSICS-
dc.identifier.doi10.1088/0022-3727/42/3/035104-
dc.contributor.localauthorZhe W.-
dc.contributor.nonIdAuthorJeong J.-H.-
dc.contributor.nonIdAuthorLee H.S.-
dc.contributor.nonIdAuthorLee S.-
dc.contributor.nonIdAuthorLee T.S.-
dc.contributor.nonIdAuthorKim W.M.-
dc.contributor.nonIdAuthorKim S.C.-
dc.contributor.nonIdAuthorOh K.H.-
dc.contributor.nonIdAuthorCheong B.-K.-
dc.type.journalArticleArticle-
dc.subject.keywordPlusPHASE-CHANGE MEDIA-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusNUCLEATION-
dc.subject.keywordPlusBEHAVIOR-
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