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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Atomic arrangement variations of 30 degrees in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing

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dc.contributor.authorShin, JWko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorNo, YSko
dc.contributor.authorKim, TWko
dc.contributor.authorChoi, WKko
dc.date.accessioned2013-03-08T19:32:14Z-
dc.date.available2013-03-08T19:32:14Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-06-
dc.identifier.citationJOURNAL OF MATERIALS RESEARCH, v.24, pp.2006 - 2010-
dc.identifier.issn0884-2914-
dc.identifier.urihttp://hdl.handle.net/10203/94058-
dc.description.abstractHigh-resolution transmission electron microscopy (HRTEM) images of annealed ZnO thin-films showed the domain boundaries of a (01 (1) over bar0) plane with a transition zone and a (01 (1) over bar1) plane without a transition zone. The 30 degrees in-plane rotation domain boundaries were formed in the ZnO thin films because the angle of the c-axis was tilted 3.5 degrees in comparison with that of neighboring 30 degrees in-plane rotation domains to reduce the misfit strain energy. The atomic arrangement variations of 30 degrees in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing are described.-
dc.languageEnglish-
dc.publisherMATERIALS RESEARCH SOC-
dc.subjectELECTRONIC-STRUCTURE-
dc.subjectSAPPHIRE-
dc.subjectEPITAXY-
dc.subjectDEPOSITION-
dc.titleAtomic arrangement variations of 30 degrees in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing-
dc.typeArticle-
dc.identifier.wosid000267207900015-
dc.identifier.scopusid2-s2.0-68149126734-
dc.type.rimsART-
dc.citation.volume24-
dc.citation.beginningpage2006-
dc.citation.endingpage2010-
dc.citation.publicationnameJOURNAL OF MATERIALS RESEARCH-
dc.identifier.doi10.1557/JMR.2009.0233-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorNo, YS-
dc.contributor.nonIdAuthorKim, TW-
dc.contributor.nonIdAuthorChoi, WK-
dc.type.journalArticleArticle-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusSAPPHIRE-
dc.subject.keywordPlusEPITAXY-
dc.subject.keywordPlusDEPOSITION-
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