DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Yong Woo | ko |
dc.contributor.author | Ahn, Jin Hyung | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2009-06-15T02:11:18Z | - |
dc.date.available | 2009-06-15T02:11:18Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-12 | - |
dc.identifier.citation | ELECTRONIC MATERIALS LETTERS, v.1, no.2, pp.97 - 102 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/9395 | - |
dc.description.abstract | The structure of silicon oxide films grown in inductively coupled plasma (ICP) with oxygen gas at temperatures ranging from 350 to 450 degrees C was studied. The thickness of the oxide ranged from 10 to 40 nm. A FTIR spectroscopy showed that the Si-O-Si bond angle was smaller than that in the high-temperature thermal oxide. The bond angle decreased as the oxide thickness decreased. An X-ray reflectivity analysis showed that the density of the ICP oxide (2.23 g/cm(3)) was larger than that of thermal oxide (2.20 g/cm(3)) grown at 900 degrees C. The accumulation of compressive stress could be the cause of small bond angles and the high density in the ICP oxide. A very thin surface layer with a lower density was also detected on the as-grown ICP oxide. The ICP oxide showed a high etch rate and low refractive index as the oxide thickness decreased, indicating that these chemical and physical properties were strongly affected by the magnitude of the Si-O-Si bond angle. | - |
dc.description.sponsorship | This work was supported by the Korean Science and Engineering Foundation. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.title | Structure of SiO2 Films Grown at Low Temperature by Inductively Coupled Plasma Oxidation with Oxygen Gas | - |
dc.type | Article | - |
dc.identifier.wosid | 000208605000001 | - |
dc.type.rims | ART | - |
dc.citation.volume | 1 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 97 | - |
dc.citation.endingpage | 102 | - |
dc.citation.publicationname | ELECTRONIC MATERIALS LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Choi, Yong Woo | - |
dc.contributor.nonIdAuthor | Ahn, Jin Hyung | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | inductively coupled plasma | - |
dc.subject.keywordAuthor | low temperature oxidation | - |
dc.subject.keywordAuthor | SiO2 structure | - |
dc.subject.keywordAuthor | Si-O-Si bond angle | - |
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