ELECTRICAL-PROPERTIES OF CDTE-FILMS PREPARED BY CLOSE-SPACED SUBLIMATION WITH SCREEN-PRINTED SOURCE LAYERS

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dc.contributor.authorCHUNG, GYko
dc.contributor.authorPARK, SCko
dc.contributor.authorCHO, Kko
dc.contributor.authorAhn, Byung Taeko
dc.date.accessioned2009-06-15T02:08:15Z-
dc.date.available2009-06-15T02:08:15Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1995-11-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.78, no.9, pp.5493 - 5498-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/9394-
dc.description.abstractCdTe films have been deposited by a close-spaced sublimation process with screen-printed CdTe layers as a new source. The source-layers were fabricated by screen printing and sintering slurries consisting of propylene glycol, CdCl2 and either CdTe powder or (Cd+Te) powder. When CdTe powder was used as a starting material for the source-layer, the electrical resistivity of the CdTe film deposited in O-2 was about one-tenth lower than that of the film deposited in He. AES, EDS and PIXE analysis showed that the Cd content in the CdTe films deposited in O-2 was Smaller than that in the CdTe films deposited in He. Especially, no oxygen element was detected in the CdTe films deposited in O-2. It turned out that the Sublimated Cd(g) and CdTe(g) from the source-layer formed cadmium oxides in O-2 and as a result the overall composition of vapor source became more Cd-deficient. The CdTe film with less Cd content increased cadmium vacancy defects (V2-Cl+ and ed V-Cd(2-)) and hole concentrations. As the Cd/Te ratio in the starting (Cd+Te) powder decreased, the ed resistivity of the CdTe films decreased and reached at a constant value of about 3x10(4) Omega . cm, regardless of deposition atmosphere. In addition, the resistivity decrease by O-2 treatment was diminished when the Cd/Te ratio was below 0.7, where the composition of CdTe film might be limited by solid solubility (Cd0.92Te1.0) The above results indicated that the resistivity decrease of CdTe films deposited in O-2 was not due to the effect of previously-known oxygen doping but due to the effect of Cd/Te compositional change. (C) 1995 American Institute of Physics.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.subjectCDS/CDTE SOLAR-CELLS-
dc.titleELECTRICAL-PROPERTIES OF CDTE-FILMS PREPARED BY CLOSE-SPACED SUBLIMATION WITH SCREEN-PRINTED SOURCE LAYERS-
dc.typeArticle-
dc.identifier.wosidA1995TB54500040-
dc.identifier.scopusid2-s2.0-0001466791-
dc.type.rimsART-
dc.citation.volume78-
dc.citation.issue9-
dc.citation.beginningpage5493-
dc.citation.endingpage5498-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorCHO, K-
dc.contributor.localauthorAhn, Byung Tae-
dc.contributor.nonIdAuthorCHUNG, GY-
dc.contributor.nonIdAuthorPARK, SC-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCDS/CDTE SOLAR-CELLS-
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