DC Field | Value | Language |
---|---|---|
dc.contributor.author | CHUNG, GY | ko |
dc.contributor.author | PARK, SC | ko |
dc.contributor.author | CHO, K | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2009-06-15T02:08:15Z | - |
dc.date.available | 2009-06-15T02:08:15Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995-11 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.78, no.9, pp.5493 - 5498 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/9394 | - |
dc.description.abstract | CdTe films have been deposited by a close-spaced sublimation process with screen-printed CdTe layers as a new source. The source-layers were fabricated by screen printing and sintering slurries consisting of propylene glycol, CdCl2 and either CdTe powder or (Cd+Te) powder. When CdTe powder was used as a starting material for the source-layer, the electrical resistivity of the CdTe film deposited in O-2 was about one-tenth lower than that of the film deposited in He. AES, EDS and PIXE analysis showed that the Cd content in the CdTe films deposited in O-2 was Smaller than that in the CdTe films deposited in He. Especially, no oxygen element was detected in the CdTe films deposited in O-2. It turned out that the Sublimated Cd(g) and CdTe(g) from the source-layer formed cadmium oxides in O-2 and as a result the overall composition of vapor source became more Cd-deficient. The CdTe film with less Cd content increased cadmium vacancy defects (V2-Cl+ and ed V-Cd(2-)) and hole concentrations. As the Cd/Te ratio in the starting (Cd+Te) powder decreased, the ed resistivity of the CdTe films decreased and reached at a constant value of about 3x10(4) Omega . cm, regardless of deposition atmosphere. In addition, the resistivity decrease by O-2 treatment was diminished when the Cd/Te ratio was below 0.7, where the composition of CdTe film might be limited by solid solubility (Cd0.92Te1.0) The above results indicated that the resistivity decrease of CdTe films deposited in O-2 was not due to the effect of previously-known oxygen doping but due to the effect of Cd/Te compositional change. (C) 1995 American Institute of Physics. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | CDS/CDTE SOLAR-CELLS | - |
dc.title | ELECTRICAL-PROPERTIES OF CDTE-FILMS PREPARED BY CLOSE-SPACED SUBLIMATION WITH SCREEN-PRINTED SOURCE LAYERS | - |
dc.type | Article | - |
dc.identifier.wosid | A1995TB54500040 | - |
dc.identifier.scopusid | 2-s2.0-0001466791 | - |
dc.type.rims | ART | - |
dc.citation.volume | 78 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 5493 | - |
dc.citation.endingpage | 5498 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | CHO, K | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | CHUNG, GY | - |
dc.contributor.nonIdAuthor | PARK, SC | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CDS/CDTE SOLAR-CELLS | - |
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