The Discharging Characteristics of Spin-Coated MgO Thin Films with Li Dopant in a Flat Fluorescent Lamp Structure

Abstract

The physical and electronic properties of lithium ion doped MgO films formed by spin coating were investigated and characterized in a flat fluorescent lamp structure. The doped MgO films were exquisitely crystallized until the doping concentration was increased to 5%. The test panel with Li-doped MgO films showed that the initial discharge voltages were decreased with increasing the dopant concentration. In particular, the static memory margin of the test panel showed the higher value than that of pure-MgO film. The CL spectra confirmed the creation of defects energy levels in the energy band gap of MgO and showed that the main defects in the doped MgO were the F+ center increased as the concentration of lithium ion was increased.