DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, In-Young | ko |
dc.contributor.author | Yun, Seok-Ju | ko |
dc.contributor.author | Oh, Seung-Min | ko |
dc.contributor.author | Lee, SG | ko |
dc.contributor.author | Yun, SJ | ko |
dc.contributor.author | Lee, Sang-Gug | ko |
dc.date.accessioned | 2013-03-08T15:19:44Z | - |
dc.date.available | 2013-03-08T15:19:44Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-05 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.30, pp.532 - 534 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/93386 | - |
dc.description.abstract | This letter reports a cross-coupled transistor structure that allows simple routing, induces no gate-drain overlap interconnect capacitances, minimizes the parasitic resistances of interconnects, allows smaller drain-junction parasitic capacitances, and provides inherent common-centroid characteristic, all of which help to improve the high-frequency and wideband performances of CMOS voltage-controlled oscillators (VCOs). The proposed cross-coupled transistor structure is applied for a 26.2-GRZ differential VCO design which dissipates 7.3 mA from 1.8-V supply using 0.18-mu m CMOS. Measurements show 2.1-GHz, 29%, and 4-dB improvements in operating frequency, tuning range, and phase noise compared to those of the VCO using a conventional cross-coupled transistor layout, respectively. The VCO with the proposed transistor structure shows the phase noise of -113.7 dBc/Hz at 1 MHz, which corresponds to F O M and F O M(T) of -190.4 and -194 dBc/Hz, respectively. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | PHASE-NOISE IMPROVEMENT | - |
dc.subject | TECHNOLOGY | - |
dc.subject | OSCILLATORS | - |
dc.title | A Low-Parasitic and Common-Centroid Cross-Coupled CMOS Transistor Structure for High-Frequency VCO Design | - |
dc.type | Article | - |
dc.identifier.wosid | 000265711700036 | - |
dc.identifier.scopusid | 2-s2.0-67349176207 | - |
dc.type.rims | ART | - |
dc.citation.volume | 30 | - |
dc.citation.beginningpage | 532 | - |
dc.citation.endingpage | 534 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2009.2015472 | - |
dc.contributor.localauthor | Lee, Sang-Gug | - |
dc.contributor.nonIdAuthor | Oh, Seung-Min | - |
dc.contributor.nonIdAuthor | Lee, SG | - |
dc.contributor.nonIdAuthor | Yun, SJ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | common-centroid | - |
dc.subject.keywordAuthor | cross-coupled transistor layout | - |
dc.subject.keywordAuthor | gain cell layout | - |
dc.subject.keywordAuthor | low parasitic | - |
dc.subject.keywordAuthor | voltage-controlled oscillator (VCO) | - |
dc.subject.keywordPlus | PHASE-NOISE IMPROVEMENT | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | OSCILLATORS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.