Selective barrier perforation in porous alumina anodized on substrates

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dc.contributor.authorOh, Jihunko
dc.contributor.authorThompson, Carl V.ko
dc.date.accessioned2013-03-08T13:52:22Z-
dc.date.available2013-03-08T13:52:22Z-
dc.date.created2013-02-21-
dc.date.created2013-02-21-
dc.date.issued2008-04-
dc.identifier.citationADVANCED MATERIALS, v.20, no.7, pp.1368 - 1368-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10203/93173-
dc.description.abstractA new method for perforating the barrier oxide at the base of pores in alumina, which does not involve etching of the alumina, is reported. Anodization of Al layers on W leads to formation of WO3 "Plugs" that can be selectively etched without widening the as-anodized pores. We demonstrate this technique, used with templated pore formation, by creating Ni nanoelectrode arrays with fixed electrode spacings (200 nm) but varied electrode diameters.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectCARBON NANOTUBES-
dc.subjectNANOWIRE ARRAYS-
dc.subjectSILICON-
dc.subjectFABRICATION-
dc.subjectGROWTH-
dc.subjectLAYERS-
dc.subjectFILMS-
dc.titleSelective barrier perforation in porous alumina anodized on substrates-
dc.typeArticle-
dc.identifier.wosid000255348900027-
dc.identifier.scopusid2-s2.0-54949146081-
dc.type.rimsART-
dc.citation.volume20-
dc.citation.issue7-
dc.citation.beginningpage1368-
dc.citation.endingpage1368-
dc.citation.publicationnameADVANCED MATERIALS-
dc.identifier.doi10.1002/adma.200701719-
dc.contributor.localauthorOh, Jihun-
dc.contributor.nonIdAuthorThompson, Carl V.-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCARBON NANOTUBES-
dc.subject.keywordPlusNANOWIRE ARRAYS-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusLAYERS-
dc.subject.keywordPlusFILMS-
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