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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences

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dc.contributor.authorKim, Y. H.ko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorNoh, Y. G.ko
dc.contributor.authorKim, M. D.ko
dc.contributor.authorKwon, Y. J.ko
dc.contributor.authorOh, J. E.ko
dc.date.accessioned2013-03-08T11:52:47Z-
dc.date.available2013-03-08T11:52:47Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-10-
dc.identifier.citationJOURNAL OF CRYSTAL GROWTH, v.296, no.1, pp.75 - 80-
dc.identifier.issn0022-0248-
dc.identifier.urihttp://hdl.handle.net/10203/92945-
dc.description.abstractIn0.8Al0.2Sb/InSb layers were grown under various growth temperature and V/III flux ratio conditions on semi-insulating (001)oriented GaAs substrates by molecular beam epitaxy. The crystalline qualities of In0.8Al0.2Sb/InSb layers were improved by decreasing the V/III flux ratio at a fixed temperature (380 degrees C) and increasing the growth temperature of the fixed V/III ratio (6). Dislocations were only observed in the In0.8Al0.2Sb/InSb layers grown at the optimal condition. On the other hand, many planar defects, including microtwins, were observed when the In0.8Al0.2Sb/InSb layers were grown in the Sb-rich condition. Specifically, V-shaped defects drawn boundaries in the microtwins were observed in the In0.8Al0.2Sb/InSb layer. (c) 2006 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectMOLECULAR-BEAM EPITAXY-
dc.subjectMAGNETRON SPUTTER EPITAXY-
dc.subjectBUFFER LAYER-
dc.subjectGAAS SUBSTRATE-
dc.subjectINSB FILMS-
dc.subjectSUPERLATTICES-
dc.subjectQUALITY-
dc.subjectGASB-
dc.subjectSI-
dc.titleObservation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences-
dc.typeArticle-
dc.identifier.wosid000241884200011-
dc.identifier.scopusid2-s2.0-33749862502-
dc.type.rimsART-
dc.citation.volume296-
dc.citation.issue1-
dc.citation.beginningpage75-
dc.citation.endingpage80-
dc.citation.publicationnameJOURNAL OF CRYSTAL GROWTH-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, Y. H.-
dc.contributor.nonIdAuthorNoh, Y. G.-
dc.contributor.nonIdAuthorKim, M. D.-
dc.contributor.nonIdAuthorKwon, Y. J.-
dc.contributor.nonIdAuthorOh, J. E.-
dc.type.journalArticleArticle-
dc.subject.keywordAuthordefects-
dc.subject.keywordAuthormolecular beam epitaxy-
dc.subject.keywordAuthorantimonide-
dc.subject.keywordAuthorsemiconducting III-V materials-
dc.subject.keywordPlusMOLECULAR-BEAM EPITAXY-
dc.subject.keywordPlusMAGNETRON SPUTTER EPITAXY-
dc.subject.keywordPlusBUFFER LAYER-
dc.subject.keywordPlusGAAS SUBSTRATE-
dc.subject.keywordPlusINSB FILMS-
dc.subject.keywordPlusSUPERLATTICES-
dc.subject.keywordPlusQUALITY-
dc.subject.keywordPlusGASB-
dc.subject.keywordPlusSI-
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