Microstructural analysis of ZnO/ZnS nanocables through Moire fringe induced by overlapped area of ZnO and ZnS

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Unique ZnO/ZnS nanocables were synthesized by the catalyst-free simple thermal vapor transport method. Using the high-resolution transmission electron microscopy, the interface and defect structures of nanocables were investigated. The nanocables were composed of two discrete structures, which grow along [0002] or [0 (1) over bar 10] directions in wurtzite and [200] direction in sphalerite structures. Two-dimensional Moire fringes appeared in the core area due to a different interplanar spacing between ZnO and ZnS. In the nanocables grown along [0002] and [0 (1) over bar 10] direction, stacking faults, which lie in (0002) and (0 (1) over bar 10) planes were observed likewise the identical defects were also found in the (111) plane of the sphalerite structure. This work includes an in-depth discussion regarding the structure and the growth of ZnO/ZnS nanocables. (c) 2006 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2006-09
Language
English
Article Type
Article
Keywords

WURTZITE ZNS; SEMICONDUCTOR CLUSTERS; QUANTUM DOTS; NANOTUBES; NANOCRYSTALS; FABRICATION; NANOWIRES; NANOBELTS; PHOTOLUMINESCENCE; LUMINESCENCE

Citation

JOURNAL OF CRYSTAL GROWTH, v.294, pp.162 - 167

ISSN
0022-0248
URI
http://hdl.handle.net/10203/92944
Appears in Collection
MS-Journal Papers(저널논문)
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