DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, JS | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Cho, JH | ko |
dc.contributor.author | Lee, CJ | ko |
dc.contributor.author | An, SJ | ko |
dc.contributor.author | Yi, GC | ko |
dc.contributor.author | Gronsky, R | ko |
dc.date.accessioned | 2013-03-08T11:46:04Z | - |
dc.date.available | 2013-03-08T11:46:04Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-10 | - |
dc.identifier.citation | NANOTECHNOLOGY, v.16, pp.2455 - 2461 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10203/92934 | - |
dc.description.abstract | Well-aligned ZnO nanowires were successfully synthesized on a silicon substrate at the low temperature of 550 degrees C by catalyst-free vapour phase deposition. The ZnO nanowires had diameters in the range of 70-100 nm and lengths over several tens of micrometres. The synthesized ZnO nanowires, which had a single-crystalline wurtzite structure, showed a uniform morphology and faceted planes at the tips of the nanowires. The photoluminescence of the ZnO nanowires showed a strong UV band at 3.28 eV and a broad green band at 2.29 and at 2.53 eV at room temperature. A detailed discussion regarding the growth behaviour and the growth mechanism of the ZnO nanowires on the silicon substrate is presented in this work. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | PHYSICAL VAPOR-DEPOSITION | - |
dc.subject | ZINC-OXIDE NANOWIRES | - |
dc.subject | CATALYST-FREE GROWTH | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | MECHANISM | - |
dc.subject | MICROCRYSTALS | - |
dc.subject | NANOBELTS | - |
dc.subject | CRYSTALS | - |
dc.subject | NANORODS | - |
dc.title | Growth behaviour of well-aligned ZnO nanowires on a Si substrate at low temperature and their optical properties | - |
dc.type | Article | - |
dc.identifier.wosid | 000232906200079 | - |
dc.identifier.scopusid | 2-s2.0-25444499440 | - |
dc.type.rims | ART | - |
dc.citation.volume | 16 | - |
dc.citation.beginningpage | 2455 | - |
dc.citation.endingpage | 2461 | - |
dc.citation.publicationname | NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1088/0957-4484/16/10/078 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Jeong, JS | - |
dc.contributor.nonIdAuthor | Cho, JH | - |
dc.contributor.nonIdAuthor | Lee, CJ | - |
dc.contributor.nonIdAuthor | An, SJ | - |
dc.contributor.nonIdAuthor | Yi, GC | - |
dc.contributor.nonIdAuthor | Gronsky, R | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | PHYSICAL VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ZINC-OXIDE NANOWIRES | - |
dc.subject.keywordPlus | CATALYST-FREE GROWTH | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | MICROCRYSTALS | - |
dc.subject.keywordPlus | NANOBELTS | - |
dc.subject.keywordPlus | CRYSTALS | - |
dc.subject.keywordPlus | NANORODS | - |
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