Effects of doping, electron irradiation, H+ and He+ implantation on the thermoelectric properties of Bi2Se3 single crystals

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dc.contributor.authorSaji, Ako
dc.contributor.authorAmpili, Sko
dc.contributor.authorYang, SHko
dc.contributor.authorKang, Jeung Kuko
dc.contributor.authorElizabeth, Mko
dc.date.accessioned2013-03-08T09:34:47Z-
dc.date.available2013-03-08T09:34:47Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-05-
dc.identifier.citationJOURNAL OF PHYSICS-CONDENSED MATTER, v.17, pp.2873 - 2888-
dc.identifier.issn0953-8984-
dc.identifier.urihttp://hdl.handle.net/10203/92745-
dc.description.abstractAs-grown single crystals of Bi2Se3 are doped with varying percentages of tellurium. These crystals are irradiated and implanted with electrons of energy 8 MeV and H+ and He+ ions of energy 1.26 MeV for comparative studies on their properties. Effects on the thermoelectric properties of Bi2Se3 due to high-energy electron bombardment (8 MeV), H+ and He+ ion implantation and doping are studied at temperatures ranging from 150 to 380 K. Crystal homogeneity and surface dislocations are determined using EDAX and SEM. Hot-probe and Hall effect measurements show that as-grown, electron irradiated and ion implanted crystals are n-type. Thermal diffusivity measurements prove the effective scattering mechanism (phonons) in Bi2Se3 crystals and provide a valid reason for reduced thermo-power in doped crystals.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.subjectTRANSPORT-PROPERTIES-
dc.subjectSOLID-SOLUTIONS-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectDEFECTS-
dc.subjectBI2TE3-
dc.subjectBOMBARDMENT-
dc.subjectPOWER-
dc.subjectHF-
dc.titleEffects of doping, electron irradiation, H+ and He+ implantation on the thermoelectric properties of Bi2Se3 single crystals-
dc.typeArticle-
dc.identifier.wosid000229571400010-
dc.identifier.scopusid2-s2.0-21044431911-
dc.type.rimsART-
dc.citation.volume17-
dc.citation.beginningpage2873-
dc.citation.endingpage2888-
dc.citation.publicationnameJOURNAL OF PHYSICS-CONDENSED MATTER-
dc.identifier.doi10.1088/0953-8984/17/19/005-
dc.contributor.localauthorKang, Jeung Ku-
dc.contributor.nonIdAuthorSaji, A-
dc.contributor.nonIdAuthorAmpili, S-
dc.contributor.nonIdAuthorYang, SH-
dc.contributor.nonIdAuthorElizabeth, M-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTRANSPORT-PROPERTIES-
dc.subject.keywordPlusSOLID-SOLUTIONS-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusDEFECTS-
dc.subject.keywordPlusBI2TE3-
dc.subject.keywordPlusBOMBARDMENT-
dc.subject.keywordPlusPOWER-
dc.subject.keywordPlusHF-
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