DC Field | Value | Language |
---|---|---|
dc.contributor.author | Saji, A | ko |
dc.contributor.author | Ampili, S | ko |
dc.contributor.author | Yang, SH | ko |
dc.contributor.author | Kang, Jeung Ku | ko |
dc.contributor.author | Elizabeth, M | ko |
dc.date.accessioned | 2013-03-08T09:34:47Z | - |
dc.date.available | 2013-03-08T09:34:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-05 | - |
dc.identifier.citation | JOURNAL OF PHYSICS-CONDENSED MATTER, v.17, pp.2873 - 2888 | - |
dc.identifier.issn | 0953-8984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/92745 | - |
dc.description.abstract | As-grown single crystals of Bi2Se3 are doped with varying percentages of tellurium. These crystals are irradiated and implanted with electrons of energy 8 MeV and H+ and He+ ions of energy 1.26 MeV for comparative studies on their properties. Effects on the thermoelectric properties of Bi2Se3 due to high-energy electron bombardment (8 MeV), H+ and He+ ion implantation and doping are studied at temperatures ranging from 150 to 380 K. Crystal homogeneity and surface dislocations are determined using EDAX and SEM. Hot-probe and Hall effect measurements show that as-grown, electron irradiated and ion implanted crystals are n-type. Thermal diffusivity measurements prove the effective scattering mechanism (phonons) in Bi2Se3 crystals and provide a valid reason for reduced thermo-power in doped crystals. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | TRANSPORT-PROPERTIES | - |
dc.subject | SOLID-SOLUTIONS | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | DEFECTS | - |
dc.subject | BI2TE3 | - |
dc.subject | BOMBARDMENT | - |
dc.subject | POWER | - |
dc.subject | HF | - |
dc.title | Effects of doping, electron irradiation, H+ and He+ implantation on the thermoelectric properties of Bi2Se3 single crystals | - |
dc.type | Article | - |
dc.identifier.wosid | 000229571400010 | - |
dc.identifier.scopusid | 2-s2.0-21044431911 | - |
dc.type.rims | ART | - |
dc.citation.volume | 17 | - |
dc.citation.beginningpage | 2873 | - |
dc.citation.endingpage | 2888 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS-CONDENSED MATTER | - |
dc.identifier.doi | 10.1088/0953-8984/17/19/005 | - |
dc.contributor.localauthor | Kang, Jeung Ku | - |
dc.contributor.nonIdAuthor | Saji, A | - |
dc.contributor.nonIdAuthor | Ampili, S | - |
dc.contributor.nonIdAuthor | Yang, SH | - |
dc.contributor.nonIdAuthor | Elizabeth, M | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | TRANSPORT-PROPERTIES | - |
dc.subject.keywordPlus | SOLID-SOLUTIONS | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | BI2TE3 | - |
dc.subject.keywordPlus | BOMBARDMENT | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | HF | - |
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