Improved electrical stability and UV emission of zinc oxide thin films prepared by combination of metalorganic chemical vapor deposition technique and post-deposition hydrogen doping

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Fourier transform infrared and photoluminescence spectroscopy provide strong evidence that post-deposition hydrogen doping of polycrystalline zinc oxide (ZnO) thin films improves the resistivity by increasing hydrogen-related shallow donors and hydrogen passivation of native defects. Improvement of the electrical stability and UV emission confirm that post-deposition hydrogen doping is a promising method to achieve high quality ZnO thin films for the use as transparent electrodes and/or UV light emitters in thin-film-based optoelectronic devices. (C) 2006 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2007-02
Language
English
Article Type
Article
Keywords

INFRARED-ABSORPTION; OPTICAL-PROPERTIES; ZNO; SPECTROSCOPY; POSTTREATMENT

Citation

ORGANIC ELECTRONICS, v.8, pp.51 - 56

ISSN
1566-1199
DOI
10.1016/j.orgel.2006.10.010
URI
http://hdl.handle.net/10203/92623
Appears in Collection
EE-Journal Papers(저널논문)
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