DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, KT | ko |
dc.contributor.author | Lim, MH | ko |
dc.contributor.author | Kim, Ho Gi | ko |
dc.contributor.author | Choi, Y | ko |
dc.contributor.author | Tuller, HL | ko |
dc.contributor.author | Kim, Il-Doo | ko |
dc.contributor.author | Hong, JM | ko |
dc.date.accessioned | 2013-03-08T08:02:58Z | - |
dc.date.available | 2013-03-08T08:02:58Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-12 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.87, pp.2311 - 2330 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/92546 | - |
dc.description.abstract | In this letter, we report on the role of Mn doping in markedly reducing leakage currents in Ba0.6Sr0.4TiO3 (BST) high-K gate dielectrics utilized in organic thin film transistors (OTFTs) fabricated on plastic substrates. Undoped and 3% Mn-doped BST thin films, deposited by rf magnetron sputtering at room temperature on Pt/Ti/SiO2/Si substrates, exhibited relative dielectric constants of similar to 24-28. At an applied electric field of 250 kV/cm, the 3% Mn-doped BST films exhibited leakage current densities below 2x10(-8) A/cm(2) compared to the much higher value of 5x10(-4) A/cm(2) characteristic of undoped BST films. Pentacene based OTFTs using 3% Mn-doped BST gate dielectrics exhibited low voltage operation of < 10 V. This demonstrates the potential use of Mn-doped BST films as high-K gate dielectrics for stable and low operating voltage OTFTs. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | STATE | - |
dc.title | Mn-doped Ba0.6Sr0.4TiO3 high-K gate dielectrics for low voltage organic transistor on polymer substrate | - |
dc.type | Article | - |
dc.identifier.wosid | 000233825900076 | - |
dc.identifier.scopusid | 2-s2.0-28844463440 | - |
dc.type.rims | ART | - |
dc.citation.volume | 87 | - |
dc.citation.beginningpage | 2311 | - |
dc.citation.endingpage | 2330 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.2139838 | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.contributor.localauthor | Kim, Il-Doo | - |
dc.contributor.nonIdAuthor | Kang, KT | - |
dc.contributor.nonIdAuthor | Lim, MH | - |
dc.contributor.nonIdAuthor | Choi, Y | - |
dc.contributor.nonIdAuthor | Tuller, HL | - |
dc.contributor.nonIdAuthor | Hong, JM | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | STATE | - |
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