DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dong-Hun | ko |
dc.contributor.author | Cho, Nam-Gyu | ko |
dc.contributor.author | Kim, Ho-Gi | ko |
dc.contributor.author | Kim, Hyun-Suk | ko |
dc.contributor.author | Kim, Il-Doo | ko |
dc.date.accessioned | 2013-03-08T08:02:25Z | - |
dc.date.available | 2013-03-08T08:02:25Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.93, no.3 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/92545 | - |
dc.description.abstract | The authors report on the dielectric and leakage current properties of room temperature grown MgO-Ba(0.6)Sr(0.4)TiO(3) (MgO-BST) composite thin films to be utilized InGaZnO(4) thin films transistors (TFTs) fabricated on a polyethylene terephthalate (PET) substrate. The InGaZnO(4) TFTs with MgO-BST gate dielectrics exhibited low operation voltage of 4 V, high on/off current ratio of 4.13x10(6), and high field effect mobility of 10.86 cm(2)/V s. These results verify that a room temperature grown MgO-BST gate dielectric is a good candidate for producing high performance InGaZnO(4) TFTs on plastic substrates. (C) 2008 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | AMORPHOUS OXIDE SEMICONDUCTORS | - |
dc.title | Low voltage operating InGaZnO(4) thin film transistors using high-k MgO-Ba(0.6)Sr(0.4)TiO(3) composite gate dielectric on plastic substrate | - |
dc.type | Article | - |
dc.identifier.wosid | 000257968700057 | - |
dc.identifier.scopusid | 2-s2.0-48249112642 | - |
dc.type.rims | ART | - |
dc.citation.volume | 93 | - |
dc.citation.issue | 3 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.2954014 | - |
dc.contributor.localauthor | Kim, Ho-Gi | - |
dc.contributor.localauthor | Kim, Il-Doo | - |
dc.contributor.nonIdAuthor | Kim, Dong-Hun | - |
dc.contributor.nonIdAuthor | Kim, Hyun-Suk | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | AMORPHOUS OXIDE SEMICONDUCTORS | - |
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