DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, KyongTae | ko |
dc.contributor.author | Kim, Il-Doo | ko |
dc.contributor.author | Lim, Mi-Hwa | ko |
dc.contributor.author | Kim, Ho Gi | ko |
dc.contributor.author | Hong, Jae-Min | ko |
dc.date.accessioned | 2013-03-08T07:37:45Z | - |
dc.date.available | 2013-03-08T07:37:45Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-01 | - |
dc.identifier.citation | THIN SOLID FILMS, v.516, no.6, pp.1218 - 1222 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/92492 | - |
dc.description.abstract | We report on the dielectric properties and leakage current characteristics of 3 mol% Mn-doped Ba0.6Sr0.4TiO3 (BST) thin films post-annealed up to 600 degrees C following room temperature deposition. The suitability of 3 mol% Mn-doped EST films as gate insulators for low voltage ZnO thin film transistors (TFTs) is investigated. The dielectric constant of 3 mol% Mn-doped BST films increased from 24 at in-situ deposition up to 260 at an annealing temperature of 600 degrees C due to increased crystallinity and the formation of perovskite phase. The measured leakage current density of 2 3 mol% Mn-doped BST films remained on the order of 5 x 10(-9) to 10(-8) A/cm(2) without further reduction as the annealing temperature increased, thereby demonstrating significant improvement in the leakage current characteristics of in-situ grown Mn-doped BST films as compared to that (5 x 10(-4) A/cm(2) at 5 V) of pure BST films. All room temperature processed ZnO-TFTs using a 3 mol% Mn-doped BST gate insulator exhibited a field effect mobility of 1.0 cm(2)/Vs and low voltage device performance of less than 7 V (C) 2007 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | ORGANIC TRANSISTORS | - |
dc.subject | POLYMER SUBSTRATE | - |
dc.subject | IMPROVEMENT | - |
dc.title | Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistor | - |
dc.type | Article | - |
dc.identifier.wosid | 000252980400055 | - |
dc.identifier.scopusid | 2-s2.0-37349113175 | - |
dc.type.rims | ART | - |
dc.citation.volume | 516 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 1218 | - |
dc.citation.endingpage | 1222 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.identifier.doi | 10.1016/j.tsf.2007.05.068 | - |
dc.contributor.localauthor | Kim, Il-Doo | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.contributor.nonIdAuthor | Kang, KyongTae | - |
dc.contributor.nonIdAuthor | Lim, Mi-Hwa | - |
dc.contributor.nonIdAuthor | Hong, Jae-Min | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | zinc oxide transistor | - |
dc.subject.keywordAuthor | gate insulator | - |
dc.subject.keywordAuthor | Mn doping | - |
dc.subject.keywordAuthor | barium strontium titanate | - |
dc.subject.keywordAuthor | electrical properties and measurements | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | ORGANIC TRANSISTORS | - |
dc.subject.keywordPlus | POLYMER SUBSTRATE | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
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