Electrical and field-emission properties of chemically anchored single-walled carbon nanotube patterns

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dc.contributor.authorJung, MSko
dc.contributor.authorKo, YKko
dc.contributor.authorJung, DHko
dc.contributor.authorChoi, DHko
dc.contributor.authorJung, HeeTaeko
dc.contributor.authorHeo, JNko
dc.contributor.authorSohn, BHko
dc.contributor.authorJin, YWko
dc.contributor.authorKim, Jko
dc.date.accessioned2013-03-08T06:17:38Z-
dc.date.available2013-03-08T06:17:38Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-07-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.87, no.1, pp.13114-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/92318-
dc.description.abstractWell-defined and high-density single-walled carbon nanotube (SWNT) patterns were fabricated using a combination of photolithographic and chemical assembling processes. Unlike the patterned SWNT arrays reported thus far, these SWNT patterned layers have high-density multilayer structures and excellent surface adhesion due to their direct chemical bonding to their substrates, which results in high electrical conductivity. We found that the high-density multilayer SWNT patterns emit electrons under an applied electrical field. The electrical resistivities of the SWNT layers were found to be 5-10 Omega cm, with a turn-on electric field of about 3 V/mu m at an emission current density of 10 mu A/cm(2). This technique for fabricating SWNT patterns can be used in the production of field-emission displays and in future device integration requiring carbon nanotubes (CNTs), because it provides large-area patterning of SWNTs with high stability and uniformity. (c) 2005 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAmer Inst Physics-
dc.subjectEMITTER ARRAYS-
dc.subjectFABRICATION-
dc.titleElectrical and field-emission properties of chemically anchored single-walled carbon nanotube patterns-
dc.typeArticle-
dc.identifier.wosid000230277900052-
dc.identifier.scopusid2-s2.0-24144463753-
dc.type.rimsART-
dc.citation.volume87-
dc.citation.issue1-
dc.citation.beginningpage13114-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.1968430-
dc.contributor.localauthorJung, HeeTae-
dc.contributor.nonIdAuthorJung, MS-
dc.contributor.nonIdAuthorKo, YK-
dc.contributor.nonIdAuthorJung, DH-
dc.contributor.nonIdAuthorChoi, DH-
dc.contributor.nonIdAuthorHeo, JN-
dc.contributor.nonIdAuthorSohn, BH-
dc.contributor.nonIdAuthorJin, YW-
dc.contributor.nonIdAuthorKim, J-
dc.type.journalArticleArticle-
dc.subject.keywordPlusEMITTER ARRAYS-
dc.subject.keywordPlusFABRICATION-
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