Low-temperature preparation of boron-doped nanocrystalline SiC : H films using mercury-sensitized photo-CVD technique
We investigated the dependence of hydrogenated boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) film characteristics against the substrate temperature (T-sub) by the transmission electron micrograph, Raman spectrum, and dark conductivity measurements. High quality of nanocrystalline growth at the low temperature of 120degreesC shows that the mercury-sensitized photo-assisted chemical vapor deposition (photo-CVD) technique is promising for a low-temperature fabrication of thin film solar cells onto flexible plastic substrates. (C) 2004 Elsevier B.V. All rights reserved.
- Publisher
- ELSEVIER SCIENCE BV
- Issue Date
- 2004-03
- Language
- English
- Article Type
- Article
- Keywords
SILICON SOLAR-CELL; CARBIDE P-LAYER; CARBON SOURCE; ETHYLENE
- Citation
SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.81, no.4, pp.485 - 493
- ISSN
- 0927-0248
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
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