DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, Dai Hp | ko |
dc.contributor.author | Kim, Sung-Joon | ko |
dc.contributor.author | Min, KyoungWook | ko |
dc.contributor.author | Park, J. | ko |
dc.contributor.author | Ryu, Kwangsun | ko |
dc.date.accessioned | 2013-03-08T05:25:09Z | - |
dc.date.available | 2013-03-08T05:25:09Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-01 | - |
dc.identifier.citation | NUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.584, no.2-3, pp.440 - 443 | - |
dc.identifier.issn | 0168-9002 | - |
dc.identifier.uri | http://hdl.handle.net/10203/92233 | - |
dc.description.abstract | An enhanced low dose rate effect (ELDRE) was observed in the radiation-sensitive field effect transistors (RADFETs) developed by the National Microelectronics Research Centre (NMRC) for a low total accumulated dose of less than similar to 45 Gy in silicon, or 45 Gy(Si). The effect was seen to persist even after similar to 8 days of annealing at room temperature, implying that it was not a transient effect but rather a permanent one. On the other hand, the ELDRE was seen to disappear at high total doses of above similar to 90 Gy(Si). (C) 2007 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Enhanced low dose rate effect of the radiation-sensitive field effect transistors developed by the National Microelectronics Research Centre | - |
dc.type | Article | - |
dc.identifier.wosid | 000253081800024 | - |
dc.identifier.scopusid | 2-s2.0-37549066911 | - |
dc.type.rims | ART | - |
dc.citation.volume | 584 | - |
dc.citation.issue | 2-3 | - |
dc.citation.beginningpage | 440 | - |
dc.citation.endingpage | 443 | - |
dc.citation.publicationname | NUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | - |
dc.identifier.doi | 10.1016/j.nima.2007.10.033 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Min, KyoungWook | - |
dc.contributor.nonIdAuthor | Park, J. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | RADFET | - |
dc.subject.keywordAuthor | dosimeter | - |
dc.subject.keywordAuthor | total ionizing dose | - |
dc.subject.keywordAuthor | dose rate effect | - |
dc.subject.keywordAuthor | enhanced low dose rate effect | - |
dc.subject.keywordPlus | THRESHOLD-VOLTAGE SHIFT | - |
dc.subject.keywordPlus | IONIZING-RADIATION | - |
dc.subject.keywordPlus | SPACE ENVIRONMENTS | - |
dc.subject.keywordPlus | TRAPPED HOLES | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | CHARGE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | DAMAGE | - |
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