DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, DY | ko |
dc.contributor.author | Kang, JG | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-08T03:14:04Z | - |
dc.date.available | 2013-03-08T03:14:04Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-04 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.88, no.16, pp.162107 - 162107 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/91961 | - |
dc.description.abstract | Based on theoretical calculations, we find that at p+ polycrystalline silicon (poly-Si)/HfO2 gates, Si interstitials are easily migrated from the electrode, forming Hf-Si bonds with a charge transfer to the electrode, and the resulting interface dipole raises the Fermi level of poly-Si toward the pinning level, causing high flat band voltage shifts. In O-rich grown HfO2 on Si substrates, the Si atoms substitute for the Hf sites, leading to the formation of Hf-silicate layers, while under O-poor conditions, they remain as interstitial defects, binding with the Hf atoms, and behave as a negative-U trap, which causes the threshold voltage instability. (c) 2006 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Physical origin of threshold voltage problems in polycrystalline silicon/HfO2 gate stacks | - |
dc.type | Article | - |
dc.identifier.wosid | 000236969300055 | - |
dc.identifier.scopusid | 2-s2.0-33646172195 | - |
dc.type.rims | ART | - |
dc.citation.volume | 88 | - |
dc.citation.issue | 16 | - |
dc.citation.beginningpage | 162107 | - |
dc.citation.endingpage | 162107 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.2193054 | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Kim, DY | - |
dc.contributor.nonIdAuthor | Kang, JG | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | OXIDE INTERFACE | - |
dc.subject.keywordPlus | HFO2 | - |
dc.subject.keywordPlus | EFFICIENT | - |
dc.subject.keywordPlus | SIO2 | - |
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