DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, DY | ko |
dc.contributor.author | Yun, JH | ko |
dc.contributor.author | Yoon, KH | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2009-05-27T03:39:24Z | - |
dc.date.available | 2009-05-27T03:39:24Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-05 | - |
dc.identifier.citation | THIN SOLID FILMS, v.410, no.1-2, pp.171 - 176 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/9168 | - |
dc.description.abstract | Binary selenide compounds, In2Se3 and Cu2Se, were employed in a three-stage co-evaporation process to prepare CuInSe2 films. The composition and thickness of Cu-poor regions on Cu-rich CIS film were varied by the evaporation rate of In2Se3 and Se in the third stage. The Cu-poor regions were indistinguishable from CuInSe2 film in microstructure and were precisely characterized by Auger electron microscopy, microenergy dispersive X-ray spectroscopy. and Rutherford backscattering spectroscopy. A 9.25% efficiency in an active area of 0.16 cm(2) was achieved by inverting the surface of CuInSe2 film from Cu-rich composition to In-rich composition. Introducing 100-nm-thick CuIn3Se5 onto the surface of Cu-rich CuInSe2 film increased the cell efficiency to 9.59%, due to the increased fill factor and open circuit voltage. A lowering of the interface recombination current at the CdS/CuInSe2 was attributed to the improved cell efficiency. (C) 2002 Elsevier Science B.V All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | CELLS | - |
dc.subject | IN2SE3 | - |
dc.subject | CU2SE | - |
dc.subject | CUIN3SE5 | - |
dc.subject | LAYER | - |
dc.title | Characterization of Cu-poor surface on Cu-rich CuInSe2 film prepared by evaporating binary selenide compounds and its effect on solar efficiency | - |
dc.type | Article | - |
dc.identifier.wosid | 000176276000023 | - |
dc.identifier.scopusid | 2-s2.0-0036574168 | - |
dc.type.rims | ART | - |
dc.citation.volume | 410 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 171 | - |
dc.citation.endingpage | 176 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Lee, DY | - |
dc.contributor.nonIdAuthor | Yun, JH | - |
dc.contributor.nonIdAuthor | Yoon, KH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | CuInSe | - |
dc.subject.keywordAuthor | binary selenide | - |
dc.subject.keywordAuthor | evaporation | - |
dc.subject.keywordAuthor | thin-film solar cells | - |
dc.subject.keywordPlus | CELLS | - |
dc.subject.keywordPlus | IN2SE3 | - |
dc.subject.keywordPlus | CU2SE | - |
dc.subject.keywordPlus | CUIN3SE5 | - |
dc.subject.keywordPlus | LAYER | - |
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