DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, SY | ko |
dc.contributor.author | Kim, HJ | ko |
dc.contributor.author | Na, H | ko |
dc.contributor.author | Kim, YW | ko |
dc.contributor.author | Seo, HC | ko |
dc.contributor.author | Shin, Y | ko |
dc.contributor.author | Yoon, E | ko |
dc.contributor.author | Sun, Y | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Yoon, JW | ko |
dc.contributor.author | Cheong, HM | ko |
dc.date.accessioned | 2013-03-08T00:19:21Z | - |
dc.date.available | 2013-03-08T00:19:21Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-06 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, pp.S130 - S133 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/91589 | - |
dc.description.abstract | In-rich InGaN/GaN nanostructures such as quantum wells (QWs) and quantum dots (QDs) were successfully grown by metal-organic chemical vapor deposition and their optical properties were investigated. Introduction of a relatively high growth temperature made it possible to grow In-rich InGaN/GaN QWs and growth interruption (GI) was effectively used to control their structural and optical properties. From In-rich InGaN/GaN QW structures grown without GI, enhanced thermal stability appeared in optical properties and thickness fluctuation in In-rich InGaN QWs could give intrinsic QD-like carrier localization centers. To enhance thermal characteristics, artificial formation of In-rich TnGaN/GaN QDs was done at a relatively lower growth temperature than that of QWs. From In-rich InGaN/GaN QDs, we could obtain high efficiency ultraviolet emission at room temperature. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | QUANTUM DOTS | - |
dc.subject | WELL STRUCTURES | - |
dc.subject | INDIUM NITRIDE | - |
dc.subject | PHASE EPITAXY | - |
dc.subject | BAND-GAP | - |
dc.subject | INTERRUPTION | - |
dc.subject | EMISSION | - |
dc.subject | PHYSICS | - |
dc.title | Growth of in-rich InGaN/GaN nanostructures by metal-organic chemical vapor deposition and their optical properties | - |
dc.type | Article | - |
dc.identifier.wosid | 000229589900031 | - |
dc.identifier.scopusid | 2-s2.0-20644465175 | - |
dc.type.rims | ART | - |
dc.citation.volume | 46 | - |
dc.citation.beginningpage | S130 | - |
dc.citation.endingpage | S133 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Kwon, SY | - |
dc.contributor.nonIdAuthor | Kim, HJ | - |
dc.contributor.nonIdAuthor | Na, H | - |
dc.contributor.nonIdAuthor | Kim, YW | - |
dc.contributor.nonIdAuthor | Seo, HC | - |
dc.contributor.nonIdAuthor | Shin, Y | - |
dc.contributor.nonIdAuthor | Yoon, E | - |
dc.contributor.nonIdAuthor | Sun, Y | - |
dc.contributor.nonIdAuthor | Yoon, JW | - |
dc.contributor.nonIdAuthor | Cheong, HM | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | In-rich InGaN | - |
dc.subject.keywordAuthor | quantum well (QW) | - |
dc.subject.keywordAuthor | quantum dot (QD) | - |
dc.subject.keywordAuthor | growth interruption (GI) | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordPlus | QUANTUM DOTS | - |
dc.subject.keywordPlus | WELL STRUCTURES | - |
dc.subject.keywordPlus | INDIUM NITRIDE | - |
dc.subject.keywordPlus | PHASE EPITAXY | - |
dc.subject.keywordPlus | BAND-GAP | - |
dc.subject.keywordPlus | INTERRUPTION | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | PHYSICS | - |
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